In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.

In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.

In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.

A polycrystalline SiC wafer or substrate with a high resistivity benefits functionality of a high power electronic or system in which the polycrystalline SiC wafer or substrate is present or is utilized in manufacturing the high power electronic or system. At least one embodiment of a wafer includes a polycrystalline SiC wafer or substrate that has a high resistivity (e.g., equal to or greater than 1*10{circumflex over ()}5 or 1E+5 ohm-centimeters) and low warpage. Electronic devices or components made with or from the wafer including the high resistivity polycrystalline SiC wafer or substrate are further optimized when in use and have fewer to no crystal defects. The wafer formed according to the embodiments of the present disclosure has a high or very high resistivity as compared to existing polycrystalline SiC wafers or substrate.

A polycrystalline SiC wafer or substrate with a high resistivity benefits functionality of a high power electronic or system in which the polycrystalline SiC wafer or substrate is present or is utilized in manufacturing the high power electronic or system. At least one embodiment of a wafer includes a polycrystalline SiC wafer or substrate that has a high resistivity (e.g., equal to or greater than 1*10{circumflex over ()}5 or 1E+5 ohm-centimeters) and low warpage. Electronic devices or components made with or from the wafer including the high resistivity polycrystalline SiC wafer or substrate are further optimized when in use and have fewer to no crystal defects. The wafer formed according to the embodiments of the present disclosure has a high or very high resistivity as compared to existing polycrystalline SiC wafers or substrate.

A scalable method of synthesizing hexagonal boron nitride (hBN) films and nanotubes by chemical vapor deposition (CVD) is provided. The method includes atmospheric pressure CVD of hBN on metallic growth substrates using solid boron sources and molecular nitrogen. The solid boron source can be in the form of powder, fragments, or platelets and placed upstream, on top, or below the growth substrate. The growth substrate can include Fe, Ni, Cr, Cu, and their alloys including various steels. The growth atmosphere includes nitrogen compounds, inert gases and hydrogen. The reaction can occur within a reaction vessel heated to 800 C.-1200 C. in less than 120 minutes with sequential cooling at a controlled rate. In laboratory testing, the hBN film exhibited improved protection against harsh corrosion over long periods and resistance to high-temperature oxidation in air.

A scalable method of synthesizing hexagonal boron nitride (hBN) films and nanotubes by chemical vapor deposition (CVD) is provided. The method includes atmospheric pressure CVD of hBN on metallic growth substrates using solid boron sources and molecular nitrogen. The solid boron source can be in the form of powder, fragments, or platelets and placed upstream, on top, or below the growth substrate. The growth substrate can include Fe, Ni, Cr, Cu, and their alloys including various steels. The growth atmosphere includes nitrogen compounds, inert gases and hydrogen. The reaction can occur within a reaction vessel heated to 800 C.-1200 C. in less than 120 minutes with sequential cooling at a controlled rate. In laboratory testing, the hBN film exhibited improved protection against harsh corrosion over long periods and resistance to high-temperature oxidation in air.

A method of forming a diamond coated glass structure includes providing a substrate having a first and a second side, with each side having at least one corner and one edge. A first portion of the first side can be masked and a CVD diamond layer deposited on a second portion of the first side of the substrate. After diamond deposition, ion substitution can be used to chemically modify at least a portion of the substrate. In some embodiments, flatness of substrates can be maintained despite compressive effects due to diamond coatings. In other embodiments, ion substitution into a partially diamond coated glass structure will greatly increase impact resistance at the corners, provide lower impact resistance at the edges, and have lowest impact resistance in a central region of the diamond coated glass structure.

A method of forming a diamond coated glass structure includes providing a substrate having a first and a second side, with each side having at least one corner and one edge. A first portion of the first side can be masked and a CVD diamond layer deposited on a second portion of the first side of the substrate. After diamond deposition, ion substitution can be used to chemically modify at least a portion of the substrate. In some embodiments, flatness of substrates can be maintained despite compressive effects due to diamond coatings. In other embodiments, ion substitution into a partially diamond coated glass structure will greatly increase impact resistance at the corners, provide lower impact resistance at the edges, and have lowest impact resistance in a central region of the diamond coated glass structure.

A method for producing a Group III nitride semiconductor, includes: performing an ammonia treatment of supplying a gas containing ammonia to a surface of a substrate containing sapphire; subjecting the surface of the substrate to a heat treatment in a hydrogen-dominated atmosphere, after the ammonia treatment; nitriding the surface of the substrate by supplying a gas containing ammonia to the surface of the substrate, after the subjecting; and forming a crystal nucleus layer on the substrate by generating nuclei of GaN, AlGaN or AlN on the substrate, after the nitriding.