A method for forming at least one freestanding microstructure on a diamond crystal includes the step of removing material from the diamond crystal so as to form a structured surface, wherein the removing of the material includes creating at least two trenches, each trench having a bottom and two side walls and wherein adjacent side walls of the at least two trenches form side walls of the structured surface. The method also includes the steps of depositing at least one masking layer on the structured surface, removing at least a portion of the at least one masking layer from the bottom of each of the at least two trenches, removing additional material from the diamond crystal at least along the side walls so as to deepen the trenches, and undercutting the diamond crystal so as to form the freestanding microstructure.

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.

Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I.sub.405/I.sub.412 between an intensity I.sub.405 of a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity I.sub.412 of a peak which appears at an energy of 412±2 eV is less than 1.5

Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I.sub.405/I.sub.412 between an intensity I.sub.405 of a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity I.sub.412 of a peak which appears at an energy of 412±2 eV is less than 1.5

A method comprising providing a carbonaceous material, the substrate having a first thermal conductivity. The method further comprises depositing a first masking layer having a second thermal conductivity on at least a portion of the substrate, a ratio of the second thermal conductivity to the first thermal conductivity being less than or equal to 1:30. The method further comprises depositing a second masking layer on the first masking layer to form an etch mask, and etching an exposed portion of the substrate.

Flexible implant for electrically recording or stimulating a nerve structure, said flexible implant comprising: a first layer of electrically insulating diamond; an electrode of electrically conductive doped diamond, in contact with the first layer of electrically insulating diamond; an electrically conductive layer in contact with the electrode and the first layer, so as to define a conductive track for the electrode; and a second layer of electrically insulating diamond, at least in contact with the electrically conductive layer and a remaining portion of the first layer, all of the above arranged such that: electrically insulating diamond/electrically conductive doped diamond sealing is provided at the electrode (3) by resumption of epitaxial growth; and the electrically conductive layer is encapsulated by the electrode (3), the first layer and the second layer, at the electrode and over the entirety of the remaining surface thereof except over an area defining an electrical contact. The implant has two faces, namely: a front face comprising one of the two layers of electrically insulating diamond, open locally, providing access to the electrode and the area defining an electrical contact; and a rear face comprising the other of the two layers of electrically insulating diamond.

Flexible implant for electrically recording or stimulating a nerve structure, said flexible implant comprising: a first layer of electrically insulating diamond; an electrode of electrically conductive doped diamond, in contact with the first layer of electrically insulating diamond; an electrically conductive layer in contact with the electrode and the first layer, so as to define a conductive track for the electrode; and a second layer of electrically insulating diamond, at least in contact with the electrically conductive layer and a remaining portion of the first layer, all of the above arranged such that: electrically insulating diamond/electrically conductive doped diamond sealing is provided at the electrode (3) by resumption of epitaxial growth; and the electrically conductive layer is encapsulated by the electrode (3), the first layer and the second layer, at the electrode and over the entirety of the remaining surface thereof except over an area defining an electrical contact. The implant has two faces, namely: a front face comprising one of the two layers of electrically insulating diamond, open locally, providing access to the electrode and the area defining an electrical contact; and a rear face comprising the other of the two layers of electrically insulating diamond.

A single-crystal diamond having a first facet plane is prepared. The single-crystal diamond is fixed to the support based on the first facet plane. An X-ray image of the single-crystal diamond is captured, the X-ray image being an X-ray image in which a crystal orientation of the single-crystal diamond is associated with an X-ray emission direction by associating the support to which the single-crystal diamond is fixed with the X-ray emission direction. A position of an inclusion of the single-crystal diamond in the single-crystal diamond is specified based on the X-ray image. It is determined whether or not a shape of the diamond tool intermediate is extractable from the single-crystal diamond with the inclusion being not included in an inclusion-excluded region. The shape of the diamond tool intermediate is extracted from the single-crystal diamond with the inclusion being not included in the inclusion-excluded region.

An apparatus for fabricating diamond by carbon assembly, which comprises:

a) a hydrocarbon radical generator in operable connection with
b) a mass flow conduit extending from the hydrocarbon radical generator in a) to an interface and into a primary magnetic accelerator containing one or more electromagnets in operable connection with
c) a diamond fabrication reactor comprising a diamond forming deposition substrate.

Also disclosed is a method for fabricating diamond by shockwaves using the disclosed apparatus.