A silicon single crystal substrate for vapor phase growth, having the silicon single crystal substrate being made of an FZ crystal having a resistivity of 1000 Ωcm or more, wherein the surface of the silicon single crystal substrate is provided with a high nitrogen concentration layer having a nitrogen concentration higher than that of other regions and a nitrogen concentration of 5×10.sup.15 atoms/cm.sup.3 or more and a thickness of 10 to 100 μm.

A silicon single crystal substrate for vapor phase growth, having the silicon single crystal substrate being made of an FZ crystal having a resistivity of 1000 Ωcm or more, wherein the surface of the silicon single crystal substrate is provided with a high nitrogen concentration layer having a nitrogen concentration higher than that of other regions and a nitrogen concentration of 5×10.sup.15 atoms/cm.sup.3 or more and a thickness of 10 to 100 μm.

A quality evaluation method has a step of producing a silicon for evaluation in which a single crystal silicon is grown to extend radially from a core wire 9 while polycrystalline silicon is grown in a reactor 20; and a step of performing an evaluation using the single crystal silicon.

A quality evaluation method has a step of producing a silicon for evaluation in which a single crystal silicon is grown to extend radially from a core wire 9 while polycrystalline silicon is grown in a reactor 20; and a step of performing an evaluation using the single crystal silicon.

An ingot includes a first surface, a second surface opposite to the first surface, and a third surface positioned along a first direction and connecting the first surface and the second surface. The ingot includes: a first pseudo single crystal region; an intermediate region containing one or more pseudo single crystal regions; and a second pseudo single crystal region. The first pseudo single crystal region, the intermediate region, and the second pseudo single crystal region are positioned adjacent sequentially in a second direction perpendicular to the first direction. In the second direction, a width of each of the first and second pseudo single crystal regions is larger than a width of the first intermediate region. Each of a boundary between the first pseudo single crystal region and the intermediate region and a boundary between the second pseudo single crystal region and the intermediate region includes a coincidence boundary.

An ingot includes a first surface, a second surface opposite to the first surface, and a third surface positioned along a first direction and connecting the first surface and the second surface. The ingot includes: a first pseudo single crystal region; an intermediate region containing one or more pseudo single crystal regions; and a second pseudo single crystal region. The first pseudo single crystal region, the intermediate region, and the second pseudo single crystal region are positioned adjacent sequentially in a second direction perpendicular to the first direction. In the second direction, a width of each of the first and second pseudo single crystal regions is larger than a width of the first intermediate region. Each of a boundary between the first pseudo single crystal region and the intermediate region and a boundary between the second pseudo single crystal region and the intermediate region includes a coincidence boundary.

A system and method for producing a single crystal can prevent calculation and setting mistakes and provide an adequate correction amount in the next batch. A single crystal manufacturing system includes a pulling-up apparatus that calculates a diameter measurement value of a single crystal during a pulling-up process, calculates a first diameter of the single crystal by correcting the diameter measurement value using a diameter correction coefficient, and controls crystal pulling-up conditions based on the first diameter. A diameter measuring apparatus measures a diameter of the single crystal pulled up by the pulling-up apparatus to calculate a second diameter of the single crystal. A database server acquires the first diameter and the second diameter. The database server calculates a correction amount of the diameter correction coefficient from the first and second diameters obtained at diameter measurement positions which coincide with each other under room temperature.

A system and method for producing a single crystal can prevent calculation and setting mistakes and provide an adequate correction amount in the next batch. A single crystal manufacturing system includes a pulling-up apparatus that calculates a diameter measurement value of a single crystal during a pulling-up process, calculates a first diameter of the single crystal by correcting the diameter measurement value using a diameter correction coefficient, and controls crystal pulling-up conditions based on the first diameter. A diameter measuring apparatus measures a diameter of the single crystal pulled up by the pulling-up apparatus to calculate a second diameter of the single crystal. A database server acquires the first diameter and the second diameter. The database server calculates a correction amount of the diameter correction coefficient from the first and second diameters obtained at diameter measurement positions which coincide with each other under room temperature.

A vapor deposition device is provided that can correct a positional offset of a carrier in a rotation direction relative to a wafer when the vapor deposition device is viewed in a plan view. The vapor deposition device includes a load-lock chamber provided with a holder for supporting the carrier, and the carrier and the holder are provided with a correction mechanism that corrects a position of the carrier in a rotation direction when the vapor deposition device is viewed in a plan view.

A vapor deposition device is provided that can correct a positional offset of a carrier in a rotation direction relative to a wafer when the vapor deposition device is viewed in a plan view. The vapor deposition device includes a load-lock chamber provided with a holder for supporting the carrier, and the carrier and the holder are provided with a correction mechanism that corrects a position of the carrier in a rotation direction when the vapor deposition device is viewed in a plan view.