In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 mΩcm to 1.0 mΩcm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.

A crystal puller apparatus comprises a pulling assembly to pull a crystal from a silicon melt at a pull speed; a crucible that contains the silicon melt; a heat shield above a surface of the silicon melt; a lifter to change a gap between the heat shield and the surface of the silicon melt; and one or more computing devices to determine an adjustment to the gap using a Pv-Pi margin, at a given length of the crystal, in response to a change in the pull speed. The computer-implemented method by a computing device comprises determining a pull-speed command signal to control a diameter of the crystal; determining a lifter command signal to control a gap between a heat shield and a surface of a silicon melt from which the crystal is grown; and determining an adjustment to the gap, in response to a different pull-speed, using a Pv-Pi margin.

A measurement method and a measurement apparatus are capable of measuring the transmittance of a quartz crucible accurately. A measurement method includes: emitting a parallel light from a light source disposed on a side of one wall surface of a quartz crucible toward a predetermined measurement point of the quartz crucible; measuring reception levels of light transmitted through the quartz crucible at a plurality of positions by disposing a detector at the plurality of positions on a circle centered around an exit point of the parallel light on the other wall surface of the quartz crucible; and calculating a transmittance of the quartz crucible at the predetermined measurement point based on a plurality of the reception levels of the transmitted light measured at the plurality of positions.

A measurement method and a measurement apparatus are capable of measuring the transmittance of a quartz crucible accurately. A measurement method includes: emitting a parallel light from a light source disposed on a side of one wall surface of a quartz crucible toward a predetermined measurement point of the quartz crucible; measuring reception levels of light transmitted through the quartz crucible at a plurality of positions by disposing a detector at the plurality of positions on a circle centered around an exit point of the parallel light on the other wall surface of the quartz crucible; and calculating a transmittance of the quartz crucible at the predetermined measurement point based on a plurality of the reception levels of the transmitted light measured at the plurality of positions.

A substrate for an electronic device, including a nitride semiconductor film formed on a joined substrate including a silicon single crystal, where the joined substrate has a plurality of silicon single crystal substrates that are joined and has a thickness of more than 2000 μm, and the plurality of silicon single crystal substrates are produced by a CZ method and have a resistivity of 0.1 Ωcm or lower. This provides: a substrate for an electronic device having a nitride semiconductor film formed on a silicon substrate, where the substrate for an electronic device can suppress a warp and can also be used for a product with a high breakdown voltage; and a method for producing the same.

An apparatus for manufacturing a single crystal by growing a single crystal according to a Czochralski method, the apparatus including: main chamber configured to house crucible configured to accommodate raw-material melt, and heater configured to heat raw-material melt; pulling chamber continuously provided at upper portion of main chamber and configured to accommodate single crystal grown and pulled; cooling cylinder extending from at least ceiling portion of main chamber toward raw-material melt so as to surround single crystal being pulled, cooling cylinder configured to be forcibly cooled with coolant; and auxiliary cooling cylinder fitted in an inside of cooling cylinder. Auxiliary cooling cylinder is made of any one or more materials of graphite, carbon composite, stainless steel, molybdenum, and tungsten. The auxiliary cooling cylinder has structure covering bottom surface of cooling cylinder facing raw-material melt. Gap between auxiliary cooling cylinder and bottom surface of cooling cylinder is 1.0 mm or less.

An apparatus for manufacturing a single crystal by growing a single crystal according to a Czochralski method, the apparatus including: main chamber configured to house crucible configured to accommodate raw-material melt, and heater configured to heat raw-material melt; pulling chamber continuously provided at upper portion of main chamber and configured to accommodate single crystal grown and pulled; cooling cylinder extending from at least ceiling portion of main chamber toward raw-material melt so as to surround single crystal being pulled, cooling cylinder configured to be forcibly cooled with coolant; and auxiliary cooling cylinder fitted in an inside of cooling cylinder. Auxiliary cooling cylinder is made of any one or more materials of graphite, carbon composite, stainless steel, molybdenum, and tungsten. The auxiliary cooling cylinder has structure covering bottom surface of cooling cylinder facing raw-material melt. Gap between auxiliary cooling cylinder and bottom surface of cooling cylinder is 1.0 mm or less.

Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

A cylinder assembly of a single crystal pulling apparatus and a single crystal pulling apparatus are provided in the present disclosure. The cylinder assembly includes an inner cylinder, an outer cylinder, an annular plate and a sleeve. The inner cylinder has a shape of inverted conical. An upper end of the inner cylinder is connected to an upper end of the outer cylinder. A lower end of the outer cylinder is hermetically connected to an outer edge of the annular plate. A lower end of the inner cylinder is fixedly connected to an upper surface of the annular plate. The sleeve passes through and is fixed in an annular opening of the annular plate.