A single crystal multilayer low-loss optical component including first and second layers made from dissimilar materials, with the materials including the first layer lattice-matched to the materials including the second layer. The first and second layers are grown epitaxially in pairs on a growth substrate to which the materials of the first layer are also lattice-matched, such that a single crystal multilayer optical component is formed. The optical component may further include a second substrate to which the layer pairs are wafer bonded after being removed from the growth substrate.

The present disclosure provides an epitaxial device and a gas intake structure configured for the epitaxial device. The epitaxial device includes a chamber, a submount, a gas intake structure, and an exhaust structure. The gas intake structure includes: a plurality of first gas intake passages configured to provide a first process gas containing a gas for an epitaxial reaction to a to-be-processed surface along a first direction, the first direction being parallel to the to-be-processed surface; and two second gas intake passages that are arranged at intervals along a second direction, and correspond to two adjustment areas adjacent to edges on both sides of the to-be-processed surface respectively, where at least one first gas intake passage is disposed between the two second gas intake passages, each second gas intake passage provides a second process gas to the corresponding adjustment area along the first direction, and the second process gas is configured to adjust a concentration of the gas for the epitaxial reaction flowing through the adjustment areas. The epitaxial device and the gas intake structure provided by the embodiments of the present disclosure improve uniformity of thickness distribution of an epitaxial layer formed on the entire to-be-processed surface.

The present disclosure provides an epitaxial device and a gas intake structure configured for the epitaxial device. The epitaxial device includes a chamber, a submount, a gas intake structure, and an exhaust structure. The gas intake structure includes: a plurality of first gas intake passages configured to provide a first process gas containing a gas for an epitaxial reaction to a to-be-processed surface along a first direction, the first direction being parallel to the to-be-processed surface; and two second gas intake passages that are arranged at intervals along a second direction, and correspond to two adjustment areas adjacent to edges on both sides of the to-be-processed surface respectively, where at least one first gas intake passage is disposed between the two second gas intake passages, each second gas intake passage provides a second process gas to the corresponding adjustment area along the first direction, and the second process gas is configured to adjust a concentration of the gas for the epitaxial reaction flowing through the adjustment areas. The epitaxial device and the gas intake structure provided by the embodiments of the present disclosure improve uniformity of thickness distribution of an epitaxial layer formed on the entire to-be-processed surface.

Scintillators that can support up to 20 MHz count rates, which is significantly faster than the required 100K counts/second needed for single crystal diffractometers and methods for fabricating them.

Scintillators that can support up to 20 MHz count rates, which is significantly faster than the required 100K counts/second needed for single crystal diffractometers and methods for fabricating them.

[Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more.

[Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

[Object] To provide a single-crystal fiber production equipment and a single-crystal fiber production method that do not at all require high precision control necessary for a conventional single-crystal production equipment, can very easily maintain a stable steady state for a long time, and can stably produce a long single crystal fiber having a length of several hundreds of meters or more.

[Solution] The single-crystal fiber production equipment is used to produce a single crystal fiber by irradiating an upper surface of a raw material rod with a laser beam within a chamber to form a melt, immersing a seed single crystal in the melt, and pulling the seed single crystal upward. The single-crystal fiber production equipment includes: a laser light source that emits the laser beam as a collimated beam; a pulling device configured to be upward and downward movable in a vertical direction with the seed single crystal held thereby; and a flat reflector that reflects the laser beam such that the reflected laser beam is incident vertically on the upper surface of the raw material rod. The upper surface of the raw material rod is irradiated with the laser beam such that the melt has a donut-shaped temperature distribution.

Methods of scintillation, scintillation devices, and metal halide hybrids that may be used as X-ray scintillators. The metal halide hybrids may include organic metal halide hybrids, inorganic metal halide hybrids, or organic-inorganic metal halide hybrids. The metal halide hybrids may have a 0D structure. The metal halide hybrids may be in the form of one or more discrete crystals.

Eutectic lithium chloride-cerium chloride (LiCl—CeCl.sub.3) compositions are described. An exemplary eutectic composition has about 75 mole % LiCl and about 25 mole % CeCl.sub.3. The eutectic compositions can have optical and/or scintillation properties. Also described are methods of preparing the eutectic compositions as well as methods of using radiation detectors including the eutectic compositions in the detection of radiation, including thermal neutrons.

Eutectic lithium chloride-cerium chloride (LiCl—CeCl.sub.3) compositions are described. An exemplary eutectic composition has about 75 mole % LiCl and about 25 mole % CeCl.sub.3. The eutectic compositions can have optical and/or scintillation properties. Also described are methods of preparing the eutectic compositions as well as methods of using radiation detectors including the eutectic compositions in the detection of radiation, including thermal neutrons.