Provided is a semiconductor device, including at least: a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of an m-axis in the semiconductor layer being the first direction.

An optoelectronic device includes a flexible substrate, a cerium oxide (CeO.sub.2) layer arranged on the flexible substrate, a single crystal β-III-oxide layer arranged on the CeO.sub.2 layer, and a metallic contact layer arranged on the single crystal β-III-oxide layer.

An optoelectronic device includes a flexible substrate, a cerium oxide (CeO.sub.2) layer arranged on the flexible substrate, a single crystal β-III-oxide layer arranged on the CeO.sub.2 layer, and a metallic contact layer arranged on the single crystal β-III-oxide layer.

A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

A system and method are disclosed of electrostatic alignment and surface assembly of photonic crystals for dynamic color exhibition. The method includes: dispersing a plurality of photonic crystal chains into a solution; placing the solution of the plurality of photonic crystal chains in a container; and assembling and aligning the plurality of photonic crystal chains in the solution by a local charge build up on a surface of the container to exhibit color.

A method of selectively controlling materials structure in solution based chemical synthesis and deposition of materials by controlling input energy from pulsed energy source includes determining solution conditions, searching and/or determining energy barrier(s) of a desired materials structure formation, applying precursor solution with selected solution condition onto a substrate, and applying determined input energy from a pulsed energy source with a selected condition to the substrate, thereby nucleating and growing the crystal.

A method of selectively controlling materials structure in solution based chemical synthesis and deposition of materials by controlling input energy from pulsed energy source includes determining solution conditions, searching and/or determining energy barrier(s) of a desired materials structure formation, applying precursor solution with selected solution condition onto a substrate, and applying determined input energy from a pulsed energy source with a selected condition to the substrate, thereby nucleating and growing the crystal.

A film formation apparatus includes a stage, a heater, a mist supply source, a superheated vapor supply source, and a delivery device. The stage is configured to allow a substrate to be mounted thereon. The heater is configured to heat the substrate. The mist supply source is configured to supply mist of a solution that comprises solvent and a film material dissolved in the solvent. The superheated vapor supply source is configured to supply a superheated vapor of a same material as the solvent. The delivery device is configured to deliver the mist and the superheated vapor toward a surface of the substrate to grow a film containing the film material on the surface of the substrate.

A film formation apparatus includes a stage, a heater, a mist supply source, a superheated vapor supply source, and a delivery device. The stage is configured to allow a substrate to be mounted thereon. The heater is configured to heat the substrate. The mist supply source is configured to supply mist of a solution that comprises solvent and a film material dissolved in the solvent. The superheated vapor supply source is configured to supply a superheated vapor of a same material as the solvent. The delivery device is configured to deliver the mist and the superheated vapor toward a surface of the substrate to grow a film containing the film material on the surface of the substrate.