There is herein described a method of making a single crystal wavelength conversion element from a polycrystalline wavelength conversion element, a single crystal wavelength conversion element, and a light source containing same. By making the single crystal wavelength conversion element from a polycrystalline wavelength conversion element, the method provides greater flexibility in creating single crystal wavelength conversion elements as compared to melt grown methods for forming single crystals. Advantages may include higher activator contents, forming more complex shapes without machining, providing a wider range of possible activator gradients and higher growth rates at lower temperatures.

A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by La.sub.3Ga.sub.5SiO.sub.14, and at least the content of the element M is insufficient for the stoichiometric composition represented by Ca.sub.3TaM.sub.3Si.sub.2O.sub.14. Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.

Provided are a method for preparing a thin film or a thick film, including: a first step of providing a porous substrate capable of supplying silicon; a second step of applying zeolite seed crystals onto the surface of the porous substrate; a third step of coating the seed crystals-applied porous substrate with an aqueous solution containing a structure-directing agent; and a fourth step of forming and growing a film from the seed crystals by the secondary growth above a temperature at which moisture inside the seed crystals-applied porous substrate prepared in the third step can form steam, and a film prepared by the method. The film manufacturing method of the present invention is a simple manufacturing process, and thus has high reproducibility and high throughput. Since a synthetic gel is not used and a solution is used, the unnecessary consumption of materials, environmental pollution, and waste of a synthetic gel can be prevented while not necessitating drying and washing of a film.

Provided are a method for preparing a thin film or a thick film, including: a first step of providing a porous substrate capable of supplying silicon; a second step of applying zeolite seed crystals onto the surface of the porous substrate; a third step of coating the seed crystals-applied porous substrate with an aqueous solution containing a structure-directing agent; and a fourth step of forming and growing a film from the seed crystals by the secondary growth above a temperature at which moisture inside the seed crystals-applied porous substrate prepared in the third step can form steam, and a film prepared by the method. The film manufacturing method of the present invention is a simple manufacturing process, and thus has high reproducibility and high throughput. Since a synthetic gel is not used and a solution is used, the unnecessary consumption of materials, environmental pollution, and waste of a synthetic gel can be prevented while not necessitating drying and washing of a film.

The present invention is a crystal body configured with a crystal and having a pair of light passing surfaces which face each other and pass light and at least one side surface which connects the pair of the light passing surfaces. In the crystal body according to the present invention, a ratio B/A of a dislocation density A (number/cm.sup.2) in the light passing surfaces and a dislocation density B (number/cm.sup.2) in the side surface satisfies the following general formula.
1(B/A)3600(1)

The present invention is a crystal body configured with a crystal and having a pair of light passing surfaces which face each other and pass light and at least one side surface which connects the pair of the light passing surfaces. In the crystal body according to the present invention, a ratio B/A of a dislocation density A (number/cm.sup.2) in the light passing surfaces and a dislocation density B (number/cm.sup.2) in the side surface satisfies the following general formula.
1(B/A)3600(1)

A method of forming one or more protrusions on an outer surface of a polished face of a solid state material, said method including the step of applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material; wherein irradiated focused inert gas ions from said focused inert gas ion bean penetrate the outer surface of said polished facet of said solid state material; and wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished face of said solid state material.

The method involves growing a boule of co-doped LYSO:Ce,Ca scintillation crystal containing Ce.sup.3+ ions and Ce.sup.4+ ions in a ratio of about 1:1, wherein the grown boule is substantially free of Li.sup.+ ions and Mg.sup.2+ ions. This is achieved by providing a specialized crystal growing device having an inner iridium crucible and loading it with specific oxides and a carbonate salt in specific amounts. The loaded iridium crucible is then subjected to a vacuum and then pressurized with a specific gas mixture consisting mostly of Ar admixed with a small amount of CO. The loaded and pressurized iridium crucible is then heated to yield a melt, into which a seed crystal is placed to grow (by way of the Czochrolaski pull method) an unfinished crystalline boule. This unfinished boule is then annealed in the same special pressurized atmosphere to yield the final boule of co-doped LYSO:Ce,Ca scintillation crystal.

The method involves growing a boule of co-doped LYSO:Ce,Ca scintillation crystal containing Ce.sup.3+ ions and Ce.sup.4+ ions in a ratio of about 1:1, wherein the grown boule is substantially free of Li.sup.+ ions and Mg.sup.2+ ions. This is achieved by providing a specialized crystal growing device having an inner iridium crucible and loading it with specific oxides and a carbonate salt in specific amounts. The loaded iridium crucible is then subjected to a vacuum and then pressurized with a specific gas mixture consisting mostly of Ar admixed with a small amount of CO. The loaded and pressurized iridium crucible is then heated to yield a melt, into which a seed crystal is placed to grow (by way of the Czochrolaski pull method) an unfinished crystalline boule. This unfinished boule is then annealed in the same special pressurized atmosphere to yield the final boule of co-doped LYSO:Ce,Ca scintillation crystal.

Disclosed is a method for readily and inexpensively producing zeolite without using an organic structure-directing agent (organic SDA). Specifically disclosed is a method whereby a gel containing a silica source, an alumina source, an alkaline source and water is reacted with zeolite seed crystals, to produce a zeolite with the same kind of skeletal structure as the zeolite. The gel used is a gel of a composition whereby, when a zeolite is synthesized from this gel only, the synthesized zeolite comprises at least one of the kinds of composite building units of the target zeolite.