A method for grinding a silicon carbide wafer includes the following steps. Firstly, a single crystal is sliced into several wafers, in which each wafer has a silicon-side surface, which is the first surface. The opposite side is a carbon-side surface, which is the second surface. Subsequently, the silicon-side of the wafer is faced down and placed on a grinding stage for performing a first grinding process. It should be noted that a supporting structure exist between the wafer and the grinding stage. The supporting structure can have a concave or a convex framework. After grinding the carbon-side and removing the wafer from the stage, the wafer will appear convex or concave shape on the carbon-side surface. Thereafter, the wafer is flipped upside down and the carbon-side is placed on a flat stage without any supporting structure. Finally, the silicon-side is ground as a second grinding process.

A method for grinding a silicon carbide wafer includes the following steps. Firstly, a single crystal is sliced into several wafers, in which each wafer has a silicon-side surface, which is the first surface. The opposite side is a carbon-side surface, which is the second surface. Subsequently, the silicon-side of the wafer is faced down and placed on a grinding stage for performing a first grinding process. It should be noted that a supporting structure exist between the wafer and the grinding stage. The supporting structure can have a concave or a convex framework. After grinding the carbon-side and removing the wafer from the stage, the wafer will appear convex or concave shape on the carbon-side surface. Thereafter, the wafer is flipped upside down and the carbon-side is placed on a flat stage without any supporting structure. Finally, the silicon-side is ground as a second grinding process.

A pedestal 103 of the present invention is a pedestal 103 for a seed 102 for crystal growth, in which one main surface 103a to which the seed 102 adheres is flat, and the pedestal has a gas-permeable region 106 which a thickness from the one main surface 103a that is formed to be locally thin.

A pedestal 103 of the present invention is a pedestal 103 for a seed 102 for crystal growth, in which one main surface 103a to which the seed 102 adheres is flat, and the pedestal has a gas-permeable region 106 which a thickness from the one main surface 103a that is formed to be locally thin.

Silicon carbide (SiC) wafers, SiC boules, and related methods are disclosed that provide improved dislocation distributions. SiC boules are provided that demonstrate reduced dislocation densities and improved dislocation uniformity across longer boule lengths. Corresponding SiC wafers include reduced total dislocation density (TDD) values and improved TDD radial uniformity. Growth conditions for SiC crystalline materials include providing source materials in oversaturated quantities where amounts of the source materials present during growth are significantly higher than what would typically be required. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC boules and corresponding SiC wafers with improved crystalline quality.

Silicon carbide (SiC) wafers, SiC boules, and related methods are disclosed that provide improved dislocation distributions. SiC boules are provided that demonstrate reduced dislocation densities and improved dislocation uniformity across longer boule lengths. Corresponding SiC wafers include reduced total dislocation density (TDD) values and improved TDD radial uniformity. Growth conditions for SiC crystalline materials include providing source materials in oversaturated quantities where amounts of the source materials present during growth are significantly higher than what would typically be required. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC boules and corresponding SiC wafers with improved crystalline quality.

The present invention provides a silicon carbide composite wafer and a manufacturing method thereof. The silicon carbide composite wafer includes (a) a silicon carbide material and (b) a wafer substrate, and the upper surface of the wafer substrate is bonded to the lower surface of the silicon carbide material, wherein the lower surface of the silicon carbide material and/or the upper surface of the wafer substrate undergo a surface modification, thereby allowing the silicon carbide material to be bonded to the wafer substrate directly and firmly. The technical effects of the present invention include achieving strong bonding between the wafer and the substrate, reducing manufacturing process, increasing yield rate, and achieving high industrial applicability.

An epitaxial growth device is provided, which includes an induction coil and a reaction body, and the induction coil is disposed along a circumferential direction of the reaction body; and the reaction body includes a heating base and a plurality of trays, wherein the heating base includes a plurality of workspaces, the plurality of trays are disposed in the plurality of workspaces, respectively, and each of the plurality of trays is disposed in a corresponding workspace; wherein each of the plurality of trays is configured to support a substrate, and each of the plurality of trays is capable of independently rotating relative to the heating base.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.