A method includes depositing a layer of alloy particles including rare earth permanent magnet phase above a substrate, laser scanning the layer while cooling the substrate to melt the particles, selectively initiate crystal nucleation, and promote columnar grain growth in a same direction as an easy axis of the rare earth permanent magnet phase. The method also includes repeating the depositing and scanning to form bulk anisotropic rare earth alloy magnet with aligned columnar grains.

A casting method includes: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material. The forming further included reducing a thickness of the seed proximate the first end relative to a thickness of the seed proximate the second end.

Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:

Mg.sub.2Sn.Zn.sub.a  Composition formula:

in which, a is a Zn content of from 0.05 to 1 at % relative to Mg.sub.2Sn.

Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:

Mg.sub.2Sn.Zn.sub.a  Composition formula:

in which, a is a Zn content of from 0.05 to 1 at % relative to Mg.sub.2Sn.

A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

A method of forming a silicon germanium layer on a surface of a substrate and a system for forming a silicon germanium layer are disclosed. Examples of the disclosure provide a method that includes providing a plurality of growth precursors to control and/or promote parasitic gas-phase and surface reactions, such that greater control of the film (e.g., thickness and/or composition) uniformity can be realized.

A nickel-based superalloy comprises in mass percent: 4.0% to 6.0% chromium; 0.4% to 0.8% molybdenum; 2.5% to 3.5% rhenium; 6.2% to 6.6% tungsten; 5.2% to 5.7% aluminum; 0.0 to 1.6% titanium; 6.0% to 9.9% tantalum; 0.0 to 0.7% hafnium; and 0.0 to 0.3% silicon; the balance being constituted by nickel and any impurities. A monocrystalline blade comprises such an alloy and a turbomachine including such a blade.

A nickel-based superalloy comprises in mass percent: 4.0% to 6.0% chromium; 0.4% to 0.8% molybdenum; 2.5% to 3.5% rhenium; 6.2% to 6.6% tungsten; 5.2% to 5.7% aluminum; 0.0 to 1.6% titanium; 6.0% to 9.9% tantalum; 0.0 to 0.7% hafnium; and 0.0 to 0.3% silicon; the balance being constituted by nickel and any impurities. A monocrystalline blade comprises such an alloy and a turbomachine including such a blade.

A single-crystal turbine blade and a method of making such single-crystal turbine blade are disclosed. During manufacturing, a secondary crystallographic orientation of the material of the single-crystal turbine blade is controlled based on a parameter of a root fillet between an airfoil of the single-crystal turbine blade and a platform of the single-crystal turbine blade. The parameter can be a location of peak stress in the root fillet expected during use of the turbine blade.

A single-crystal turbine blade and a method of making such single-crystal turbine blade are disclosed. During manufacturing, a secondary crystallographic orientation of the material of the single-crystal turbine blade is controlled based on a parameter of a root fillet between an airfoil of the single-crystal turbine blade and a platform of the single-crystal turbine blade. The parameter can be a location of peak stress in the root fillet expected during use of the turbine blade.