SEMICONDUCTOR MATERIAL, INFRARED LIGHT RECEIVING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR MATERIAL

Abstract

Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:

Mg.sub.2Sn.Zn.sub.a  Composition formula:

in which, a is a Zn content of from 0.05 to 1 at % relative to Mg.sub.2Sn.

Claims

1. A semiconductor material, the semiconductor material having a single crystal represented by the following composition formula:
Mg.sub.2Sn.Zn.sub.a  Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg.sub.2Sn.

2. The semiconductor material according to claim 1, wherein a is from 0.1 to 0.5 at % in the formula.

3. An infrared light receiving element comprising the semiconductor material according to claim 1.

4. A method for producing the semiconductor material according to claim 1, comprising doping with Zn in a raw material preparation step and/or a synthesis step.

5. The method for producing the semiconductor material according to claim 4, wherein the method carries out either: a direct melting method for filling a reaction vessel with a raw material obtained in the raw material preparation step, heating the raw material at a temperature more than or equal to a melting point of a product to cause synthesis, and then cooling it after the synthesis to obtain the product; or an inert gas atmosphere pressure melting method for heating and melting the raw material in a pressurized reaction vessel filled with the raw material to cause synthesis, and then cooling it after the synthesis to obtain a product.

6. The method for producing the semiconductor material according to claim 4, wherein the method carries out a solid-liquid melting method for filling the reaction vessel with the raw material obtained in the raw material preparation step, heating the raw material at a temperature less than or equal to a melting point of Mg.sub.2Sn to cause solid-liquid synthesis, and cooling it after the synthesis to obtain a product, and then optionally sintering the product.

7. The method for producing the semiconductor material according to claim 1, wherein the semiconductor material is produced by a direct melting method having the following steps (1) to (5): (1) a raw material preparation step of preparing a particulate raw material comprising Mg, Sn and Zn; (2) a raw material filling step of filling a reaction vessel with the raw material prepared in the step (1); (3) a synthesis step of heating the entire reaction vessel to cause a melting chemical reaction; (4) a step of cooling a melt produced in the step (3) to deposit a Mg.sub.2Sn.Zn.sub.a single crystal; and (5) a step of removing the Mg.sub.2Sn.Zn.sub.a single crystal deposited in the step (4) from the reaction vessel.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] FIG. 1 is a graph showing powder X-ray diffraction measurement results according to Example of the present disclosure;

[0016] FIG. 2 is a graph showing SEM-EDX measurement results according to Example of the present disclosure;

[0017] FIG. 3 is a graph showing thermogravimetric measurement results according to Example of the present disclosure;

[0018] FIG. 4 is a graph showing differential thermal analysis results according to Example of the present disclosure; and

[0019] FIG. 5 is a graph showing evaluation results of a light absorption coefficient and an energy gap according to Example of the present disclosure.

DETAILED DESCRIPTION OF THE INVENTION

(Semiconductor Material)

[0020] The semiconductor material according to the present disclosure is a semiconductor material having a single crystal represented by the following composition formula:

Mg.sub.2Sn.Zn.sub.a  Composition formula:

in which, a is a Zn content of from 0.05 to 1 at % relative to Mg.sub.2Sn.

[0021] The semiconductor material according to the present disclosure is produced by doping Mg.sub.2Sn with Zn to form a single crystal as a whole. That is, Zn is not present at grain boundaries of Mg.sub.2Sn, but present in a homogeneous solid solution state in the crystal. This would be because Mg is replaced by the doped Zn in the crystal. Since Mg.sub.2Sn.Zn.sub.a is thus the single crystal, it has no crystal grain boundary and has aligned crystal orientations. Therefore, it has effects capable of precisely controlling electrical and optical properties of the crystal, as well as capable of precise processing such as cutting, polishing, and etching. The semiconductor material is suitable as a substrate for infrared light receiving elements.

[0022] In the semiconductor material according to the present disclosure, a is a Zn content of from 0.05 to 1 at % relative to Mg.sub.2Sn, in the composition formula: Mg.sub.2Sn.Zn.sub.a. If the Zn content is less than 0.05 at %, sufficient oxidation resistance may not be obtained. Further, if the Zn content is more than 1 at %, the presence of Zn in a solid solution state in Mg.sub.2Sn will be difficult, which may cause a problem that Zn which is not capable of solid solution is segregated as a fine deposit, or the crystal is polycrystallized. In the composition formula: Mg.sub.2Sn.Zn.sub.a, a is more preferably from 0.1 to 0.5 at %.

[0023] The semiconductor material according to the present disclosure has substantially the same carrier concentration as that of a material consisting only of Mg.sub.2Sn, but has an improved light absorption coefficient, so that light receiving performance can be improved when used as an infrared light receiving element, because Mg.sub.2Sn is doped with Zn in the amount of from 0.05 to 1 at %. For example, in Examples as described later, a light absorption coefficient of a photon energy at 0.35 eV is increased about 5 times by doping with 0.5 at % of Zn.

[0024] The semiconductor material according to the present disclosure has substantially the same carrier concentration as that of the material consisting only of Mg.sub.2Sn, but the semiconductor material according to the present disclosure can have a reduced energy gap (Eg), because Mg.sub.2Sn is doped with Zn in the amount of from 0.05 to 1 at %. As a result, a wavelength of detectable light is extended and shifted to a long wavelength band, which will be more useful when used for the infrared light receiving element. For example, in Examples as described later, the Eg is reduced from 0.25 eV to 0.21 eV by doping with 0.5 at % of Zn. This can allow the maximum detectable wavelength (cutoff wavelength) to be extended from about 5 μm to about 6 μm, when the infrared light detector is produced.

[0025] The semiconductor material according to the present disclosure may be composed of a single crystal represented by the composition formula: Mg.sub.2Sn.Zn.sub.a, or may have inevitable impurities mixed in the single crystal represented by Mg.sub.2Sn.Zn.sub.a. The inevitable impurities are impurities which are inevitably mixed in the raw materials and the production steps, and which contain elements such as B, C, N, Na, Al, Si, P, Ca, Cr, Mn, Fe, Ge, As, and Sb in a total content of 0.5 at % or less.

(Infrared Light Receiving Element)

[0026] An infrared light receiving element can be produced using the semiconductor material according to the present disclosure. The infrared light receiving element can employ, for example, the semiconductor material according to the present disclosure as a p-type or n-type light absorption region used for p-n junction photodiodes, although not particularly limited thereto. According to the semiconductor material of the present disclosure, it is possible to provide a semiconductor material having improved oxidation resistance. Further, the light absorption coefficient near a forbidden band energy is increased, so that the light detection sensitivity can be increased. Further, the energy gap (Eg) can be reduced up to about 0.21 eV, thereby producing an infrared light receiving element that can expand the receivable cutoff wavelength to about 6 μm, and can detect infrared light having a longer wavelength. Therefore, the production of the infrared light receiving element including the semiconductor material can allow deterioration of various devices for sensing and imaging in the infrared light region to be suppressed. Accordingly, significant contribution can be expected to technologies such as various image analysis and image diagnosis, as well as automatic monitoring and control technologies using them, and industrial fields using those technologies.

(Method for Producing Semiconductor Material)

[0027] The method for producing the semiconductor material according to the present disclosure is not particularly limited, but the following methods can be preferably used.

[0028] That is, the method carries out either: a direct melting method for filling a reaction vessel with a raw material obtained in a raw material preparation step, heating the raw material at a temperature more than or equal to a melting point of a product to cause synthesis, and then cooling it after the synthesis to obtain the product; or an inert gas atmosphere pressure melting method for heating and melting the raw material in a pressurized reaction vessel filled with the raw material to cause synthesis, and then cooling it after the synthesis to obtain a product.

[0029] Further, it may carry out a solid-liquid melting method for filling the reaction vessel with the raw material obtained in the raw material preparation step, heating the raw material at a temperature less than or equal to a melting point of Mg.sub.2Sn to cause solid-liquid synthesis, and cooling it after the synthesis to obtain a product, and then optionally carrying out melting synthesis.

[0030] The method for producing the semiconductor material according to the present disclosure is characterized by doping with Zn in the raw material preparation step and/or the synthesis step.

[0031] According to these methods, the single crystal of the semiconductor material according to the present disclosure can be easily produced by using a known production method.

[0032] Preferably, for example, the single crystal of the semiconductor material according to the present disclosure can be produced by a direct melting method having the following steps (1A) to (5A):

(1A) a raw material preparation step of preparing a raw material containing Mg particles and Sn particles or Mg—Sn alloy particles;
(2A) a raw material filling step of doping the raw material prepared in the step (1A) with Zn and filling a reaction vessel with the raw material;
(3A) a synthesis step of heating the entire reaction vessel to cause a chemical reaction;
(4A) a step of cooling a melt produced in the step (3A) to deposit a single crystal; and
(5A) a step of removing the single crystal deposited in the step (4A) from the reaction vessel.

[0033] The Zn doped in the step (2A) can be fed as single metal particulate material. It can also be fed as an alloy such as MgZn.

[0034] The semiconductor material according to the present disclosure may be produced by a direct melting method having the following steps (1B) to (5B):

(1B) a raw material preparation step of preparing a particulate raw material comprising Mg, Sn and Zn;
(2B) a raw material filling step of filling a reaction vessel with the raw material prepared in the step (1B);
(3B) a synthesis step of heating the entire reaction vessel to cause a melting chemical reaction;
(4B) a step of cooling a melt produced in the step (3B) to deposit a Mg.sub.2Sn.Zn.sub.a single crystal; and
(5B) a step of removing the Mg.sub.2Sn.Zn.sub.a single crystal deposited in the step (4B) from the reaction vessel.

[0035] The raw materials Mg and Sn used in the present invention may preferably employ highly purified and chunk-shaped particles having a purity of 4N (99.99%) or more, and more preferably 5N (99.999%) or more, and more preferably 6N (99.99999%), and having an average particle size of from about 2 to 3 mm. In general, Mg and Sn are mixed such that the total of the raw materials Mg particles and Sn particles has an element ratio of 2:1. Further, Zn is mixed such that the atomic concentration of Zn is from 0.5 to 10 at % relative to Mg.sub.2Sn.

[0036] A pressure during the heating may be atmospheric pressure, but heating in an Ar gas at about 3 atm is desirable. A heating temperature is 770.5° C. (the melting point of Mg.sub.2Sn) to 850° C., and for example, the heat treatment is performed for about 15 minutes to 14 hours in total. At a temperature of 770.5° C. or more, Mg and Sn are melted to form an Mg—Sn melt, and Zn is homogeneously melted therein. In this case, an amount of Zn added to the raw material is about ten times the target Zn content, although it varies depending on crystal synthesis conditions such as a cooling rate. For example, in Examples as described later, the Zn contents in the single crystal are 0.5 at % and 1 at %, respectively, for cases where Zn is added to the raw material having Mg:Sn=2:1 in amounts of 5 at % and 10 at %, when the crystal is grown at a cooling rate of 20° C./h.

[0037] The cooling of the obtained melt is not particularly limited, and a known cooling device can be used and a known cooling method can be used. After synthesis, the melt is cooled to obtain a single crystal. The cooling may be natural cooling, forced cooling, or a combination thereof.

[0038] It is preferable to cause chemical reaction of Mg with Sn with stirring, because it can allow a single crystal to be more uniformly produced in a short period of time. The stirring may be carried out using a known stirring device and a known stirring method, although not particularly limited.

[0039] Further, the method for producing the semiconductor material according to the present disclosure may be a method for producing a semiconductor material by a chemical vapor deposition method (CVT method) having the following steps (1C) to (5C):

(1C) a raw material preparation step of preparing Mg, Sn, Zn, or a Mg.sub.2Sn polycrystalline raw material obtained by synthesizing these;
(2C) a raw material filling step of filling a reaction vessel with the raw material prepared in the step (1C) together with a transporting material (CI, Br, I, etc.);
(3C) a synthetic step of heating the reaction vessel to cause a melting chemical reaction;
(4C) a step of cooling the melt produced in the step (3C) to deposit a Mg.sub.2Sn.Zn.sub.a single crystal; and
(5C) a step of removing the Mg.sub.2Sn.Zn.sub.a single crystal deposited in the step (4C) from the reaction vessel.

[0040] In the synthesis step (3C) as described above, the reaction vessel is placed in an electric furnace having a temperature gradient and maintained with heating. In this case, the raw material side is maintained at a higher temperature and the crystal growth side is maintained at a lower temperature, whereby the transport material and the raw material are allowed to react and vaporized in the higher temperature part, and the raw material substances are transported to the lower temperature part in the gas phase. In the lower temperature part, the raw material in the gas phase reacts and grows as crystals due to supersaturation. In general, the temperature during heating is 770.5° C. or less, which is the melting point of Mg.sub.2Sn in the higher temperature part, but it may be higher than the melting point. The lower temperature part where the crystal is grown must be maintained at a temperature of 770.5° C. or less.

[0041] Further, to make an infrared light detector, a single crystal film of the semiconductor material according to the present disclosure can be used in the light absorption region of the detector. In this case, the single crystal film can be produced by a generally known semiconductor film deposition technique such as a molecular beam epitaxy method (MBE method), a metalorganic chemical vapor deposition method (MOCVD method), and a sputtering deposition method.

[0042] In the MBE method, generally, Mg, Sn, and Zn are simultaneously fed by molecular beam obtained by evaporating them in a vacuum vessel, and the composition ratio is adjusted to deposit Mg.sub.2Sn.Zn.sub.a on a substrate such as Mg.sub.2Sn. During the deposition, the substrate is generally heated. The heating temperature is generally 100° C. or higher and lower than or equal to the melting point of Mg. By the heating, the molecules deposited on the substrate react to grow a single crystal Mg.sub.2Sn.Zn.sub.a film.

[0043] In the MOCVD method, generally, organometallic gases containing Mg, Sn, and Zn are simultaneously fed in a reaction vessel, and the composition ratio is adjusted to deposit Mg.sub.2Sn.Zn.sub.a on a substrate such as Mg.sub.2Sn. During the deposition, the substrate is generally heated. The heating temperature is generally 100° C. or higher and lower than or equal to the melting point of Mg. By the heating, the organometallic gases react on the substrate to grow a single crystal Mg.sub.2Sn.Zn.sub.a film.

[0044] In the sputter deposition method, generally, a solid target containing Mg, Sn, and Zn is sputtered in a reaction vessel with Ar ions to feed sputter molecules, and the composition ratio is adjusted to deposit Mg.sub.2Sn.Zn.sub.a on a substrate such as Mg.sub.2Sn. During the deposition, the substrate is generally heated. The heating temperature is generally 100° C. or higher and lower than or equal to the melting point of Mg. By the heating, sputter molecules react on the substrate to grow a single crystal Mg.sub.2Sn.Zn.sub.a film.

[0045] It should be noted that the descriptions of the above embodiments are for explaining the present invention, and they are not intended to limit or restrict the scope of the inventions recited in the claims. Further, the configuration of each part of the present invention is not limited to the above embodiments, and various modifications may be made within the technical scope recited in the claims.

EXAMPLES

[0046] Hereinafter, the technical contents of the present disclosure will be specifically described based on Examples. The following Examples are merely specific examples for facilitating the understanding of the technical contents of the present disclosure, and the technical scope of the present invention is not limited by these specific Examples.

(Production of Semiconductor Material)

[0047] In an alumina crucible (alumina tammann tube) having an inner diameter of 12 mmφ and a length of 11 cm were placed Mg particles having a purity of 4N [chunk material (an average particle size of 2 to 3 mm) from RARE METALLIC Co., Ltd.], Sn particles having a purity of 5N [chunk material] (an average particle size of 2 to 3 mm) from OSAKA ASAHI METAL MFG CO., LTD.], and zinc [particulate material (a particle size of 1 mm), a purity of 99.99999% from OSAKA ASAHI METAL MFG CO., LTD.].

[0048] The crucible was then sealed in a quartz ampoule together with an Ar gas at 560 Torr, and it was placed in an electric furnace (resistance heating furnace), and heated to 780° C. (display temperature) over 1 hour. After further heating it at the same temperature for 14 hours to melt it, the temperature of the electric furnace was decreased to a temperature of 300° C. at a cooling rate of 20° C./h to grow crystals. The furnace was then naturally cooled, and at the time when the temperature reached room temperature, the crucible was removed from the electric furnace to obtain a semiconductor material according to Example.

[0049] Further, a semiconductor material according to Comparative Example was produced by the same method as that of Example as described above, with the exception that Zn was not added as the raw material mixture.

(Composition of Semiconductor Material)

[0050] The composition of the semiconductor material according to Example was measured using a fluorescent X-ray analyzer. As a result, the composition was Mg.sub.2Sn.Zn.sub.0.5 (i.e., the Zn content was 0.5 at % relative to Mg.sub.2Sn). Further, the composition of the semiconductor material according to another Example was measured by the same method. As a result, it was Mg.sub.2Sn.Zn.sub.1 (i.e., the Zn content was 1 at % relative to Mg.sub.2Sn).

[0051] On the other hand, the composition of the semiconductor material according to Comparative Example was also measured with the same method, and as a result, it was Mg.sub.2Sn.

(Powder X-ray Diffraction Measurement)

[0052] The resulting semiconductor materials were subjected to powder X-ray diffraction measurement. As a result, Example of the composition formula Mg.sub.2Sn.Zn.sub.0.5 (Zn: 0.5 at %) had a peak at a position similar to that of Comparative Example (non-doped) of the composition formula Mg.sub.2Sn, as shown in FIG. 1. That is, it is found that the crystal of Example of the composition formula Mg.sub.2Sn.Zn.sub.0.5 has a single phase as with Mg.sub.2Sn, and has no dispersion of Zn at the grain boundaries, and form a single crystal in solid solution in the crystal. The same was true for Example of the composition formula Mg.sub.2Sn.Zn.sub.1.

(Observation by SEM-EDX)

[0053] The cross section of the resulting semiconductor material was observed by SEM-EDX. As a result, the grain boundary of Mg.sub.2Sn was not observed, revealing that it had a homogenous single crystal as shown in FIG. 2. Further, it was confirmed that no minute deposit of the doped Zn was observed, and that the Zn was in homogeneous solid solution in Mg.sub.2Sn.

(Measurement of Oxidation Resistance)

[0054] The resulting semiconductor materials were heated under conditions of an atmospheric flow of 300 ml/min and a temperature rising rate of 10° C./min from room temperature using a commercially available thermogravimetric differential thermal analyzer (TG-DTA), and an increase in weight (% by mass) when reached 700° C. was determined. The test results are shown in FIG. 3. The graph of FIG. 3 shows a percentage of the increase in weight (% by mass) relative to the weight before heating. As can be seen from the graph of FIG. 3, in Example of the composition formula Mg.sub.2Sn.Zn.sub.0.5 doped with Zn, the threshold temperature at the start of oxidation in TG was increased from about 420° C. to about 450° C. and the progress of oxidation is slow, as compared with Comparative Example that was not doped with Zn. This indicates that Example doped with Zn has improved oxidation resistance.

[0055] Further, the results of the differential thermal analysis are shown in FIG. 4. It is found from FIG. 4 that Example of the composition formula Mg.sub.2Sn.Zn.sub.0.5 doped with Zn, the DTA peak temperature was increased from 442° C. to 472° C. and it is difficult to be oxidized, as compared with Comparative Example that was not doped with Zn. This indicates that Example doped with Zn has improved oxidation resistance.

(Measurement of Light Absorption Coefficient and Energy Gap)

[0056] The resulting semiconductor materials were subjected to transmission and reflection measurements at room temperature using a commercially available FTIR to evaluate the light absorption coefficient and the energy gap. As shown in FIG. 5, it is found that, in Example of the composition formula Mg.sub.2Sn.Zn.sub.0.5 doped with Zn, the light absorption coefficient is increased (in particular, the absorption coefficient of the photon energy at 0.35 eV is increased about 5 times), and the energy gap is also reduced from 0.25 eV to 0.21 eV. This indicates that the sensitivity in the infrared light detection is increased and the detectable wavelength is extended, indicating that the semiconductor material according to the present disclosure is a useful material for an infrared light receiving element.