A method of making a component includes: depositing a metallic powder on a workplane; directing a beam from a directed energy source to fuse the powder in a pattern corresponding to a cross-sectional layer of the component; repeating in a cycle the steps of depositing and fusing to build up the component in a layer-by layer fashion; and during the cycle of depositing and melting, using an external heat control apparatus separate from the directed energy source to maintain a predetermined temperature profile of the component, such that the resulting component has a directionally-solidified or single-crystal microstructure.

A method for manufacturing a blade, the method includes casting a nickel alloy blade precursor having an airfoil and a root. The airfoil and the root are solution heat treating differently from each other. After the solution heat treating, the root is wrought processed. After the wrought processing, an exterior of the root is machined.

A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semiconductor material layer forms a germanium-containing layer over the semiconductor material layer, etching the germanium-containing layer, where the etching of the germanium-containing layer removes the germanium-containing layer formed over the n-type S/D epitaxial feature and the semiconductor material layer formed over the p-type S/D epitaxial feature, and forming a first S/D contact over the semiconductor material layer remaining over the n-type S/D epitaxial feature and a second S/D contact over the p-type S/D epitaxial feature. The semiconductor material layer may have a composition similar to that of the n-type S/D epitaxial feature.

A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semiconductor material layer forms a germanium-containing layer over the semiconductor material layer, etching the germanium-containing layer, where the etching of the germanium-containing layer removes the germanium-containing layer formed over the n-type S/D epitaxial feature and the semiconductor material layer formed over the p-type S/D epitaxial feature, and forming a first S/D contact over the semiconductor material layer remaining over the n-type S/D epitaxial feature and a second S/D contact over the p-type S/D epitaxial feature. The semiconductor material layer may have a composition similar to that of the n-type S/D epitaxial feature.

Polycrystalline material comprising a plurality of nano-grains of a crystalline phase of an iron group element and a plurality of crystalline grains of material including carbon (C) or nitrogen (N); each nano-grain having a mean size less than 10 nanometres.

Polycrystalline material comprising a plurality of nano-grains of a crystalline phase of an iron group element and a plurality of crystalline grains of material including carbon (C) or nitrogen (N); each nano-grain having a mean size less than 10 nanometres.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that <100>orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of Fe—Ga alloy by using electric discharge machining in a state that <100>orientation of the crystal of the Fe—Ga alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

The present disclosure provides a TiCB-Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB-Al seed alloy includes an Al matrix and TiC.sub.B@TiBC seed crystals dispersed on the Al matrix, wherein the TiC.sub.B@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiC.sub.B, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiC.sub.B refers to a TiC.sub.B phase formed by B atoms occupying C vacancies in a TiC.sub.x crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.