This disclosure provides a hydrogen storing alloy and a production method thereof. The hydrogen storing alloy has a chemical composition of a general formula R.sub.(1-x)Mg.sub.xNi.sub.y, wherein R is one or more elements selected from rare earth elements comprising Y, x satisfies 0.05≦x≦0.3, and y satisfies 2.8≦y≦3.8. The ratio of the maximal peak intensity present in a range of 2θ=31°-33° to the maximal peak intensity present in a range of 2θ=41°-44° is 0.1 or less (including 0), as measured by X-ray diffraction in which a Cu-Kα ray is set as an X-ray source.

This disclosure provides a hydrogen storing alloy and a production method thereof. The hydrogen storing alloy has a chemical composition of a general formula R.sub.(1-x)Mg.sub.xNi.sub.y, wherein R is one or more elements selected from rare earth elements comprising Y, x satisfies 0.05≦x≦0.3, and y satisfies 2.8≦y≦3.8. The ratio of the maximal peak intensity present in a range of 2θ=31°-33° to the maximal peak intensity present in a range of 2θ=41°-44° is 0.1 or less (including 0), as measured by X-ray diffraction in which a Cu-Kα ray is set as an X-ray source.

One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.

One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.

The disclosure relates to a method for making an iron telluride including placing Fe, Bi, and Te in a reacting chamber as reacting materials. The reacting chamber is evacuated to be a vacuum with a pressure lower than 10 Pa. The reacting chamber is heated to a first temperature of 700 degrees Celsius to 900 degrees Celsius and keeping the first temperature for a period of 10 hours to 14 hours. Then the reacting chamber is cooled to a second temperature of 400 degrees Celsius to 700 degrees Celsius within 60 hours to 75 hours and keeping the second temperature for a period of 40 hours to 50 hours, to obtain a reaction product including a FeTe.sub.0.9 single crystal. The FeTe.sub.0.9 single crystal is separated from the reaction product.

The disclosure relates to a method for making an iron telluride including placing Fe, Bi, and Te in a reacting chamber as reacting materials. The reacting chamber is evacuated to be a vacuum with a pressure lower than 10 Pa. The reacting chamber is heated to a first temperature of 700 degrees Celsius to 900 degrees Celsius and keeping the first temperature for a period of 10 hours to 14 hours. Then the reacting chamber is cooled to a second temperature of 400 degrees Celsius to 700 degrees Celsius within 60 hours to 75 hours and keeping the second temperature for a period of 40 hours to 50 hours, to obtain a reaction product including a FeTe.sub.0.9 single crystal. The FeTe.sub.0.9 single crystal is separated from the reaction product.

A pull rod for use in producing a single crystal from a molten alloy is provided that includes an elongated rod having a first end and a second end, a first cavity defined at the first end and a second cavity defined at the first end and in communication with the first cavity. The first cavity receives the molten alloy and the second cavity vents a gas from the molten alloy to thereby template a single crystal when the pull rod is dipped into and extracted from the molten alloy.

A nanocellular single crystal nickel based material is provided having a thermal diffusivity in the range of 0.0002 cm{circumflex over ( )}2/s to 0.02 cm{circumflex over ( )}2/s and a thermal conductivity in the range of 0.024 W/mK to 9.4 W/mK. The nanocellular single crystal nickel based material may be used to form turbine engine components. The nanocellular single crystal nickel based material may be produced by providing a first solution containing a nickel precursor and deionized water, providing a second solution containing a structure controlling polymer/surfactant and an alcohol, mixing the first and second solutions into a solution containing a reducing agent to form a third solution, and processing the third solution to create the nanocellular single crystal based material.

A nanocellular single crystal nickel based material is provided having a thermal diffusivity in the range of 0.0002 cm{circumflex over ( )}2/s to 0.02 cm{circumflex over ( )}2/s and a thermal conductivity in the range of 0.024 W/mK to 9.4 W/mK. The nanocellular single crystal nickel based material may be used to form turbine engine components. The nanocellular single crystal nickel based material may be produced by providing a first solution containing a nickel precursor and deionized water, providing a second solution containing a structure controlling polymer/surfactant and an alcohol, mixing the first and second solutions into a solution containing a reducing agent to form a third solution, and processing the third solution to create the nanocellular single crystal based material.

A method is provided for manufacturing a component. This method includes additively manufacturing a crucible for casting of the component. A metal material is directionally solidified within the crucible to form a metal single crystal material. A sacrificial core is removed to reveal a metal single crystal component with internal passageways. A component is provided for a gas turbine engine that includes a metal single crystal material component with internal passageways. The metal single crystal material component was additively manufactured of a metal material concurrently with a core that forms the internal passageways. The metal material was also remelted and directionally solidified.