A nanostructured material includes carbon nanoparticles (CNPs), such as carbon nanotube particles (CNTs) or carbon nanofiber particles (CNFs), intercalated by intercalation nanoparticles (INPs), such as halloysite nanoparticles (HNPs), in a base material, such as a polymer. A method for making the nanostructured material includes the steps of: providing a mixture of carbon nanoparticles (CNPs) having a selected composition; providing intercalation nanoparticles (INPs) configured to intercalate the carbon nanoparticles (CNPs); intercalating the carbon nanoparticles (CNPs) by mixing the intercalation nanoparticles (INPs) in a selected CNP:HNP ratio to form an intercalated material; and combining the intercalated material in a base material in a selected concentration with the base material providing a matrix for the intercalated material.

Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

The present invention relates to a nanomaterial comprising a nanoclay having a layered structure and carbon nanotubes being intercalated between layers of the layered of the nanoclay, and manufacturing method thereof.

A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.

Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

A method for fabricating porous wire-in-tube (WiT) nanostructures including forming a first porous core-shell nanostructure, forming a second porous core-shell nanostructure by increasing thickness and porosity of the porous core-shell nanostructure, and forming a porous WiT nanostructure by etching the second porous core-shell nanostructure. Forming the first porous core-shell nanostructure may include forming a porous layer on a semi-conductive core by depositing a first plurality of particles on the semi-conductive core and generating an initial porous semi-conductive core by etching the semi-conductive core simultaneously with forming the porous layer.

The present invention relates to a nanomaterial comprising a nanoclay having a layered structure and carbon nanotubes being intercalated between layers of the layered of the nanoclay, and manufacturing method thereof.

A method for producing an aligned boron nitride nanotube film includes drying a dispersion containing boron nitride nanotubes, a biopolymer, and a solvent.

Disclosed is a building blocks method for low-cost fabrication of single crystal organometallic perovskite materials with pseudo crystallized hole transporting material layer. This method uses self-assembled molecular monolayers SAM as building blocks. This approach enables creation of defect-free perovskite crystals with desired morphology and crystallinity in a controlled way. Additionally, the crosslinked molecular layers SAM play a role of hole transporting materials HTM and encapsulation against diffusion of metal atoms and gas molecules, thus enhancing the stability of the perovskite materials. This method is cost effective and can be scaled up.

A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.