A nano-twinned copper layer is disclosed, wherein over 50% of a volume of the nano-twinned copper layer comprises a plurality of columnar crystal grains, the plurality of columnar crystal grains connect to each other, at least 70% of the plurality of columnar crystal grains are formed by a plurality of nano-twins stacking in an orientation of a crystal axis, and an angle included between two adjacent columnar crystal grains is greater 20° and less than or equal to 60°. In addition, a method for manufacturing the nano-twinned copper layer and a substrate comprising the same are also disclosed.

An organic single-crystalline heterojunction composite film is provided. The organic single-crystalline heterojunction composite film comprises at least one organic single-crystalline efficiently coupled unit. The organic single-crystalline efficiently coupled unit constructed by two organic single-crystalline thin films laminated together, with highly efficient lamination. The organic single-crystalline heterojunction composite film of the present disclosure has multiple advantages, such as highly ordered molecular arrangement, few defects, long exciton diffusion length, and excellent charge carrier transportation in the single-crystalline layer, moreover, integration of optoelectronic function and flexibility could be realized. The preparation method of organic single-crystalline heterojunction composite film is also provided. High-quality organic single-crystalline heterojunction composite film has a wide range of applications in the fields of sensors, photodetectors, solar cells, displays, memory devices, complementary circuits, and so on.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.

A large grain quasi-single-crystal film and a manufacturing method thereof are provided. The metal film having the <111> preferred orientation on its surface is subjected to mechanical tensile force to make the arrangement of crystal grains more ordered. The metal film is grown into a film with large crystal grains having an average diameter of over 500 microns by annealing at a temperature below the recrystallization temperature, thereby obtaining a large grain quasi-single-crystal film having the preferred directions of three axes. The large grain quasi-single-crystal film has a <110> preferred orientation along the tensile direction and a <211> preferred orientation along the direction vertical to the tensile force, and maintains a <111> preferred orientation on its top surface. The present invention can be used to produce highly anisotropic large-area quasi-single-crystal films, and can also be applied to grow 2-dimensional materials or develop anisotropic structures.

An optical element is provided. The optical element includes a solid crystal including crystal molecules aligned in a predetermined alignment pattern at least partially defined by an alignment structure.

A light emitting structure has quantum wells grown on a coalesced substrate stemming from nanocolumns. The crystal structure is very low in defects and efficiency of light production is good. By growing the nanocolumns at a lower temperature, the quantum well structure is better matched to the coalesced substrate and efficiency is improved.

Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric constant and excellent mechanical properties. The nanocrystalline boron nitride film includes a crystalline boron nitride compound, and has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

A large grain quasi-single-crystal film and a manufacturing method thereof are provided. The metal film having the <111> preferred orientation on its surface is subjected to mechanical tensile force to make the arrangement of crystal grains more ordered. The metal film is grown into a film with large crystal grains having an average diameter of over 500 microns by annealing at a temperature below the recrystallization temperature, thereby obtaining a large grain quasi-single-crystal film having the preferred directions of three axes. The large grain quasi-single-crystal film has a <110> preferred orientation along the tensile direction and a <211> preferred orientation along the direction vertical to the tensile force, and maintains a <111> preferred orientation on its top surface. The present invention can be used to produce highly anisotropic large-area quasi-single-crystal films, and can also be applied to grow 2-dimensional materials or develop anisotropic structures.