In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Ga.sub.x1Al.sub.y1In.sub.1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Ga.sub.x2Al.sub.y2In.sub.1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.

A method to reduce the work function of a carbon-coated lanthanum hexaboride (LaB6) cathode wherein the exposed tip of the cathode is exposed to moisture between two heat treatments is provided. The work function may be reduced by 0.01 eV or more.

A method to reduce the work function of a carbon-coated lanthanum hexaboride (LaB6) cathode wherein the exposed tip of the cathode is exposed to moisture between two heat treatments is provided. The work function may be reduced by 0.01 eV or more.

This disclosure describes methods, apparatus, and systems related to non-contiguous channel bonding. A device may determine a wireless communication channel having one or more subchannels in accordance with one or more communication standards. The device may determine instructions to perform one or more clear channel assessments (CCAs) on at least one of the one or more subchannels. The device may cause to send the instructions to one or more first devices. The device may identify a frame received from at least one of the one or more first devices, wherein the frame is received on at least one available subchannel of the one or more subchannels.

This disclosure describes methods, apparatus, and systems related to non-contiguous channel bonding. A device may determine a wireless communication channel having one or more subchannels in accordance with one or more communication standards. The device may determine instructions to perform one or more clear channel assessments (CCAs) on at least one of the one or more subchannels. The device may cause to send the instructions to one or more first devices. The device may identify a frame received from at least one of the one or more first devices, wherein the frame is received on at least one available subchannel of the one or more subchannels.

A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and branch diameter and branching number density can be changed along the trunk's length; (2) the branch's azimuthal direction can be controlled along the trunk's length; (3) the branch's diameter can be modulated along its length; (4) the crystal orientation and branches of the ensemble of nanowires can be aligned on a non-epitaxially matched substrate. The structures are made by a geometrically controlled kinetic growth method.

A new set of branched nanowire or nanotree structures and their fabrication process. Some structures have one or more of the following distinctions from other branched nanowires: (1) the trunk and branch diameter and branching number density can be changed along the trunk's length; (2) the branch's azimuthal direction can be controlled along the trunk's length; (3) the branch's diameter can be modulated along its length; (4) the crystal orientation and branches of the ensemble of nanowires can be aligned on a non-epitaxially matched substrate. The structures are made by a geometrically controlled kinetic growth method.

An as-grown single crystal ingot of a dopant-containing metal oxide or quasi-binary compound is provided in which a lateral surface has a length L greater than or equal to 50 mm, there is a linear recess on the lateral surface, and, in the area surrounded by the lateral surface, the outer shape of the cross-section perpendicular to the length direction and positioned spaced 50 mm away in the length direction from the other end in the length direction without with the recess is such that, outside of the area formed by the line of intersection between the cross-section and a faceted surface, the maximum value of the distance X of the recess from an ideal outer shape is less than or equal to 5 mm.

An as-grown single crystal ingot of a dopant-containing metal oxide or quasi-binary compound is provided in which a lateral surface has a length L greater than or equal to 50 mm, there is a linear recess on the lateral surface, and, in the area surrounded by the lateral surface, the outer shape of the cross-section perpendicular to the length direction and positioned spaced 50 mm away in the length direction from the other end in the length direction without with the recess is such that, outside of the area formed by the line of intersection between the cross-section and a faceted surface, the maximum value of the distance X of the recess from an ideal outer shape is less than or equal to 5 mm.