A method for manufacturing substrate-transferred optical coatings, comprising: a) providing a first optical coating on a first host substrate as a base coating structure; b) providing a second optical coating on a second host substrate; c) bonding the optical coating of the base coating structure to the second optical coating, thereby obtaining one combined coating; d) detaching one of the first and the second host substrates from the combined coating; determining if the combined coating fulfills a predetermined condition; e) if the result of the determining step is negative, taking the combined coating together with the remaining host substrate as the base coating structure to be processed next and continuing with step b); f) if the result of the determining step is positive, providing an optical substrate and bonding the optical substrate to the combined coating; g) removing the other one of the first and the second host substrate.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Embodiments relate to a layered material (having a substrate, at least a buffer layer, with zero or more growth layers) that has been intercalated via a process that decouples (physically and electronically) the buffer layer from the substrate, thereby resulting in the creation of few-atom thick metal layers that exhibit a range of optical properties, including plasmonic or electronic resonance, that enables superior optical (e.g. Raman) detection of molecules.

Embodiments relate to a layered material (having a substrate, at least a buffer layer, with zero or more growth layers) that has been intercalated via a process that decouples (physically and electronically) the buffer layer from the substrate, thereby resulting in the creation of few-atom thick metal layers that exhibit a range of optical properties, including plasmonic or electronic resonance, that enables superior optical (e.g. Raman) detection of molecules.

An organic single-crystalline heterojunction composite film is provided. The organic single-crystalline heterojunction composite film comprises at least one organic single-crystalline efficiently coupled unit. The organic single-crystalline efficiently coupled unit constructed by two organic single-crystalline thin films laminated together, with highly efficient lamination. The organic single-crystalline heterojunction composite film of the present disclosure has multiple advantages, such as highly ordered molecular arrangement, few defects, long exciton diffusion length, and excellent charge carrier transportation in the single-crystalline layer, moreover, integration of optoelectronic function and flexibility could be realized. The preparation method of organic single-crystalline heterojunction composite film is also provided. High-quality organic single-crystalline heterojunction composite film has a wide range of applications in the fields of sensors, photodetectors, solar cells, displays, memory devices, complementary circuits, and so on.

An organic single-crystalline heterojunction composite film is provided. The organic single-crystalline heterojunction composite film comprises at least one organic single-crystalline efficiently coupled unit. The organic single-crystalline efficiently coupled unit constructed by two organic single-crystalline thin films laminated together, with highly efficient lamination. The organic single-crystalline heterojunction composite film of the present disclosure has multiple advantages, such as highly ordered molecular arrangement, few defects, long exciton diffusion length, and excellent charge carrier transportation in the single-crystalline layer, moreover, integration of optoelectronic function and flexibility could be realized. The preparation method of organic single-crystalline heterojunction composite film is also provided. High-quality organic single-crystalline heterojunction composite film has a wide range of applications in the fields of sensors, photodetectors, solar cells, displays, memory devices, complementary circuits, and so on.

A method that incorporates teachings of the subject disclosure may comprise, for example, selecting a barium-strontium-titanate (BST) material, wherein the BST material has a perovskite lattice structure with at least a first lattice constant and a second lattice constant; selecting a strontium-barium-niobate (SBN) material, wherein the SBN material has a lattice structure with at least a third lattice constant and a fourth lattice constant, wherein the third lattice constant is substantially equal to the first lattice constant, and wherein the fourth lattice constant is substantially equal to the second lattice constant; and growing, on a grain boundary region of the BST material, the SBN material, wherein the growing is via self-assembly, and wherein the growing is facilitated by the third lattice constant of the SBN material being substantially equal to the first lattice constant and the fourth lattice constant of the SBN material being substantially equal to the second lattice constant. Other embodiments are disclosed.

A method that incorporates teachings of the subject disclosure may comprise, for example, selecting a barium-strontium-titanate (BST) material, wherein the BST material has a perovskite lattice structure with at least a first lattice constant and a second lattice constant; selecting a strontium-barium-niobate (SBN) material, wherein the SBN material has a lattice structure with at least a third lattice constant and a fourth lattice constant, wherein the third lattice constant is substantially equal to the first lattice constant, and wherein the fourth lattice constant is substantially equal to the second lattice constant; and growing, on a grain boundary region of the BST material, the SBN material, wherein the growing is via self-assembly, and wherein the growing is facilitated by the third lattice constant of the SBN material being substantially equal to the first lattice constant and the fourth lattice constant of the SBN material being substantially equal to the second lattice constant. Other embodiments are disclosed.

Provided is a fluorite-based material thin film including an orthorhombic crystal structure having a symmetric segment and a non-symmetric segment; and at least two domains having different polarization directions. At least one of, the symmetric segment is not present at a wall between the domains, or at least two symmetric segments are consecutive. Also provided is a semiconductor device including the fluorite-based material thin film having an orthorhombic crystal structure. A polarization direction of the fluorite-based material thin film is configured to be changed by a structural transition between the symmetric segment and the non-symmetric segment.