Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.

The technology subject of the present application concerns methods and systems for manufacturing and producing stable polarized or ferroelectric layered materials.

A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon nitride (SiC) substrate having a carbon face (C-face) without an off-angle; B: form an amorphous structure layer on the C-face of the SiC substrate; C: deposit a first group III nitride layer on the amorphous structure layer; and D: deposit a second group III nitride layer on the first group III nitride layer. By forming the amorphous structure layer, a top surface of the second group III nitride layer could be made to be in a flat and smooth state.

A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon carbide (SiC) substrate, wherein a silicon face (Si-face) of the SiC substrate is taken as a growth face having an off-angle relative to the Si-face of the SiC substrate; B: deposit a nitride angle adjustment layer having a thickness less than 50 nm on the growth face of the SiC substrate through physical vapor deposition (PVD); C: deposit a first group III nitride layer on the nitride angle adjustment layer; and D: deposit a second group III nitride layer on the first group III nitride layer. Through the method of manufacturing the epitaxial structure, when the silicon face of the silicon carbide substrate has the off-angle, the problem of a poor epitaxial quality of the first group III nitride layer and a poor epitaxial quality of the second group III nitride layer could be effectively relieved.

A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon carbide (SiC) substrate, wherein a silicon face (Si-face) of the SiC substrate is taken as a growth face having an off-angle relative to the Si-face of the SiC substrate; B: deposit a nitride angle adjustment layer having a thickness less than 50 nm on the growth face of the SiC substrate through physical vapor deposition (PVD); C: deposit a first group III nitride layer on the nitride angle adjustment layer; and D: deposit a second group III nitride layer on the first group III nitride layer. Through the method of manufacturing the epitaxial structure, when the silicon face of the silicon carbide substrate has the off-angle, the problem of a poor epitaxial quality of the first group III nitride layer and a poor epitaxial quality of the second group III nitride layer could be effectively relieved.

A method of manufacturing an epitaxial structure includes steps of: A: provide a silicon carbide (SiC) substrate, wherein a silicon face (Si-face) of the SiC substrate is taken as a growth face, and the growth face has an off-angle relative to the Si-face of the SiC substrate; B: deposit a nitride angle adjustment layer on the growth face of the SiC substrate through physical vapor deposition (PVD); C: deposit a first group III nitride layer on the nitride angle adjustment layer; and D: deposit a second group III nitride layer on the first group III nitride layer. Through the method of manufacturing the epitaxial structure, when the silicon face of the silicon carbide substrate has the off-angle, the problem of a poor epitaxial quality of the first group III nitride layer and a poor epitaxial quality of the second group III nitride layer could be effectively relieved.

Some variations provide a method of making an additively manufactured single-crystal metallic component, comprising: providing a feedstock comprising a first metal or metal alloy; providing a build plate comprising a single crystal of a second metal or metal alloy; exposing the feedstock to an energy source for melting the feedstock, generating a melt layer on the build plate; and solidifying the melt layer, generating a solid layer (on the build plate) of a metal component. The solid layer is also a single crystal of the first metal or metal alloy. The method may be repeated many times to build the part. Some variations provide a single-crystal metallic component comprising a plurality of solid layers in an additive-manufacturing build direction, wherein the plurality of solid layers forms a single crystal of a metal or metal alloy with a continuous crystallographic texture. The crystal orientation may vary along the additive-manufacturing build direction.

Some variations provide a method of making an additively manufactured single-crystal metallic component, comprising: providing a feedstock comprising a first metal or metal alloy; providing a build plate comprising a single crystal of a second metal or metal alloy; exposing the feedstock to an energy source for melting the feedstock, generating a melt layer on the build plate; and solidifying the melt layer, generating a solid layer (on the build plate) of a metal component. The solid layer is also a single crystal of the first metal or metal alloy. The method may be repeated many times to build the part. Some variations provide a single-crystal metallic component comprising a plurality of solid layers in an additive-manufacturing build direction, wherein the plurality of solid layers forms a single crystal of a metal or metal alloy with a continuous crystallographic texture. The crystal orientation may vary along the additive-manufacturing build direction.

The present invention relates to a nanomaterial comprising a nanoclay having a layered structure and carbon nanotubes being intercalated between layers of the layered of the nanoclay, and manufacturing method thereof.

A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.