Proposed are a layered Group III-V antimony compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] M.sub.x−mA.sub.ySb.sub.z (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.

Quantum dots and methods of making quantum dots are provided.

Quantum dots and methods of making quantum dots are provided.

A layered solid element includes a ferroelectric layer of a crystalline material Li.sub.1−x(Nb.sub.1−yTa.sub.y).sub.1+xO.sub.3+2x−z which has X- or 33° Y-orientation with respect to a substrate of the layered solid element. The ferroelectric layer is grown epitaxially from a buffer layer having of one of the chemical formulae L.sub.kNi.sub.rO.sub.1.5.Math.(k+r)+w or L.sub.n+1Ni.sub.nO.sub.3n+1+δ, where L is a lanthanide element. Such layered solid element may form a thin-film bulk acoustic resonator and be useful for integrated electronic circuits such as RF-filters, or guided optical devices such as integrated optical modulators.

A layered solid element includes a ferroelectric layer of a crystalline material Li.sub.1−x(Nb.sub.1−yTa.sub.y).sub.1+xO.sub.3+2x−z which has X- or 33° Y-orientation with respect to a substrate of the layered solid element. The ferroelectric layer is grown epitaxially from a buffer layer having of one of the chemical formulae L.sub.kNi.sub.rO.sub.1.5.Math.(k+r)+w or L.sub.n+1Ni.sub.nO.sub.3n+1+δ, where L is a lanthanide element. Such layered solid element may form a thin-film bulk acoustic resonator and be useful for integrated electronic circuits such as RF-filters, or guided optical devices such as integrated optical modulators.

According to one embodiment, a nitride crystal includes first, second, and third nitride crystal regions. The third nitride crystal region includes Al, and is provided between the first and second nitride crystal regions. A third oxygen concentration in the third nitride crystal region is greater than a first oxygen concentration in the first nitride crystal region and greater than a second oxygen concentration in the second nitride crystal region. A third carbon concentration in the third nitride crystal region is greater than a first carbon concentration in the first nitride crystal region and greater than a second carbon concentration in the second nitride crystal region. A <0001> direction of the first nitride crystal region is one of a first orientation from the second nitride crystal region toward the first nitride crystal region or a second orientation from the first nitride crystal region toward the second nitride crystal region.

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.