A single-crystal β-Ga.sub.2O.sub.3 MSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-Ga.sub.2O.sub.3 substrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-Ga.sub.2O.sub.3 substrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after processing, coating an Au thin film on the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate; and grinding the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-Ga.sub.2O.sub.3 MSM detector.

A single-crystal β-Ga.sub.2O.sub.3 MSM detector and a preparation method thereof, comprising: machining grooves on a single-crystal β-Ga.sub.2O.sub.3 substrate using a laser-assisted waterjet machining technique to form a 3D shape; wet etching the machined single-crystal β-Ga.sub.2O.sub.3 substrate using an HF solution to remove machining damage; performing Au evaporation on a surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after processing, coating an Au thin film on the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate; and grinding the surface of the single-crystal β-Ga.sub.2O.sub.3 substrate after evaporation to remove the Au thin film on an undressed surface and retain the Au thin film in the grooves, and then obtaining the single-crystal β-Ga.sub.2O.sub.3 MSM detector.

A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

A crystal piece of monocrystalline silicon suitable for the production of semiconductor wafers has a length of not less than 8 cm and not more than 50 cm and a diameter of not less than 280 mm and not greater than 320 mm, wherein the fraction of the semiconductor wafers produced therefrom that are free from pinholes having a size of not more than 30 μm is greater than 98%.

A crystal piece of monocrystalline silicon suitable for the production of semiconductor wafers has a length of not less than 8 cm and not more than 50 cm and a diameter of not less than 280 mm and not greater than 320 mm, wherein the fraction of the semiconductor wafers produced therefrom that are free from pinholes having a size of not more than 30 μm is greater than 98%.

A method for manufacturing a compound semiconductor substrate that can achieve thinning of SiC film, wherein the method includes forming a SiC film on one principal surface side of a Si substrate and forming a recessed part in which a bottom surface is Si in a central part of another principal surface of the Si substrate.

The present invention provides a method for manufacturing an epitaxial film and the epitaxial film thereof. The method comprises the steps of: providing a first single crystal substrate and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate; removing the sacrificial layer in order to separate the first epitaxial film from the first single crystal substrate; shifting the first epitaxial film to a second single crystal substrate so as to let the first epitaxial film cover on a partial surface of the second single crystal substrate, wherein the first epitaxial film and the second single crystal substrate are two different crystallographic plane orientations in absolute coordinates; and forming a second epitaxial film on the first epitaxial film and the second single crystal substrate, so as to let the second epitaxial film has at least two crystallographic plane orientations.

The present invention provides a method for manufacturing an epitaxial film and the epitaxial film thereof. The method comprises the steps of: providing a first single crystal substrate and forming a sacrificial layer and a first epitaxial film on the first single crystal substrate; removing the sacrificial layer in order to separate the first epitaxial film from the first single crystal substrate; shifting the first epitaxial film to a second single crystal substrate so as to let the first epitaxial film cover on a partial surface of the second single crystal substrate, wherein the first epitaxial film and the second single crystal substrate are two different crystallographic plane orientations in absolute coordinates; and forming a second epitaxial film on the first epitaxial film and the second single crystal substrate, so as to let the second epitaxial film has at least two crystallographic plane orientations.

The method comprises contacting a silicon substrate with a silver salt and an acid for a time effective to produce spikes having a first end disposed on the silicon substrate and a second end extending away from the silicon substrate. The spikes have a second end diameter of about 10 nm to about 200 nm, a height of about 100 nm to 10 micrometers, and a density of about 10 to 100 per square microns. The nanostructures provide antimicrobial properties and can be transferred to the surface of various materials such as polymers.