Among other things, a gas storage system includes a group of capsules and an activation element coupled to the group. The group of capsules are formed within a substrate and contain gas stored at a relatively high pressure compared to atmospheric pressure. The activation element is configured to deliver energy in an amount sufficient to cause at least one of the capsules to release stored gas.

Among other things, a gas storage system includes a group of capsules and an activation element coupled to the group. The group of capsules are formed within a substrate and contain gas stored at a relatively high pressure compared to atmospheric pressure. The activation element is configured to deliver energy in an amount sufficient to cause at least one of the capsules to release stored gas.

A synthetic diamond material comprises a surface, wherein the surface comprises a first surface region comprising a first concentration of quantum spin defects. A second surface region has a predetermined area and is located adjacent to the first surface region, the second region comprising a second concentration of quantum spin defects. The first concentration of quantum spin defects is at least ten times greater than the second concentration of quantum spin defects, and at least one of the first or second surface regions comprises chemical vapour deposition, CVD, synthetic diamond. A method of producing the synthetic diamond material is also disclosed.

Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.

Methods and systems for forming structures including a superlattice of silicon-containing epitaxial layers using nanoparticles. Exemplary methods can include forming nanoparticles in situ and depositing the nanoparticles onto a substrate surface to thereby form the epitaxial layers.

A method of manufacturing a silicon carbide semiconductor device includes the following steps. In a silicon carbide substrate including a silicon carbide single-crystal substrate and a silicon carbide epitaxial film provided on the silicon carbide single-crystal substrate, a reference mark serving as a reference of two dimensional position coordinates is formed. After forming the reference mark, at least one of polishing or cleaning is performed on a reference mark formation surface of the silicon carbide substrate. Position coordinates of a defect present in the silicon carbide substrate are specified based on the reference mark. A device active region is formed in the silicon carbide substrate. Position coordinates of the device active region are specified based on the reference mark. A pass/fail judgement of the device active region is made by associating the position coordinates of the defect with the position of the device active region.

Disclosed is a method including: a) obtaining a substrate extending in a predetermined plane with a first layer parallel to the plane; b) forming a through-hole in the first layer; c) depositing a second layer on the first, the second layer filling the a through-hole to form a bridge of material; d) etching a hairspring in an etching layer made up of the second layer or the substrate, the one of the second layer and the substrate in which the a hairspring is not etched constituting a support, the bridge of material connecting the hairspring to the support perpendicular to the predetermined plane; e) removing the first layer, the hairspring remaining attached to the support by the bridge of material; f) subjecting the hairspring to a thermal treatment; and g) detaching the hairspring from the support.

Disclosed is a method including: a) obtaining a substrate extending in a predetermined plane with a first layer parallel to the plane; b) forming a through-hole in the first layer; c) depositing a second layer on the first, the second layer filling the a through-hole to form a bridge of material; d) etching a hairspring in an etching layer made up of the second layer or the substrate, the one of the second layer and the substrate in which the a hairspring is not etched constituting a support, the bridge of material connecting the hairspring to the support perpendicular to the predetermined plane; e) removing the first layer, the hairspring remaining attached to the support by the bridge of material; f) subjecting the hairspring to a thermal treatment; and g) detaching the hairspring from the support.

Polishing method comprising the steps of: —providing at least one crystalline layer or substrate, the at least one crystalline layer or substrate extending in at least one plane, and including at least one outer surface and at least one depression extending from the at least one outer surface; and —polishing the at least one outer surface using ion beam etching (IBE) or an accelerated inert gas ion beam, the ion beam being incident on the at least one outer surface at non-normal incidence or at a non-zero angle (θ) with respect to the surface normal of the at least one plane of the crystalline layer or substrate.

Polishing method comprising the steps of: —providing at least one crystalline layer or substrate, the at least one crystalline layer or substrate extending in at least one plane, and including at least one outer surface and at least one depression extending from the at least one outer surface; and —polishing the at least one outer surface using ion beam etching (IBE) or an accelerated inert gas ion beam, the ion beam being incident on the at least one outer surface at non-normal incidence or at a non-zero angle (θ) with respect to the surface normal of the at least one plane of the crystalline layer or substrate.