Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.

One object of the present invention is to provide a gas-liquid separating device which can efficiently recover a target gas from a mixture containing at least a gas and a liquid in a gas-liquid coexistence state, and the present invention provides a gas-liquid separating device which separates and recovers a gas and a liquid from a mixture containing the gas and the liquid in a gas-liquid coexistence state, wherein the gas-liquid separating device includes an airtight space in which the mixture containing the gas and the liquid in a gas-liquid coexistence state is supplied and the mixture is stored as a mixture separated into gas and liquid, a supply path for supplying the mixture containing the gas and the liquid in a gas-liquid coexistence state into the airtight space, a gas recovery path for discharging the gas in the airtight space to the outside of the airtight space, a first decompressor which is provided in the gas recovery path and recovers the gas from the airtight space, a liquid recovery path for discharging the liquid in the airtight space to the outside of the airtight space, and a second decompressor which is provided in the liquid recovery path and configured to recover the liquid from the airtight space.

The invention relates to a storage medium and to a method for using a storage medium based on ionic compounds, which can reversibly absorb and store chlorine and chlorine from process gases, and which can release the same again by changing the ambient conditions, wherein the storage medium can be reused for this task after discharge.

A method for processing hydrogen chloride from isocyanate preparation comprises the steps: a) providing hydrogen chloride; b) purifying the hydrogen chloride provided; and furthermore step c) or step d): c) bringing the purified hydrogen chloride into contact with water and/or with hydrochloric acid which is not saturated with respect to uptake of hydrogen chloride, d) further processing the purified hydrogen chloride to chlorine by partial oxidation. The hydrogen chloride provided in step a) contains organic and/or nitrogen-containing impurities and in step b) the purification is carried out by bringing hydrogen chloride into contact with hydrochloric acid which is saturated to the extent of 90% with respect to uptake of hydrogen chloride at least in a first gas scrubber (10) and circulating this hydrochloric acid at least partially through the first gas scrubber (10).

The present invention relates to a continuous process for preparing chlorine and a production unit for carrying out said process. The present invention further relates to a use of said production unit for the continuous production of chlorine.

A method for preparing chlorine gas through catalytic oxidation of hydrogen chloride is carried out by one-time hydrogen chloride feeding and multi-stage oxygen feeding, one-time oxygen feeding and multi-stage hydrogen chloride feeding, or both, returning a product gas stream without separation thereof, and optionally carrying out heat insulation means. In the present invention, excessive reaction heat concentration is prevented, therefore, the method of the present invention is a chlorine gas recovery method implemented through the Deacon catalytic oxidation of hydrogen chloride that may be industrialized.

A method includes depositing graphene into a hardener, mixing the hardener and the graphene to produce a homogenous composite mixture, adding a resin material to the composite mixture to produce an epoxy graphene material, coating a structure with the epoxy graphene material, aligning the graphene sheets in the in-plane orientation, and curing the epoxy graphene material.

A process (10) for the treatment of a lithium containing material, the process comprising the steps of: (i) Preparing a process solution from the lithium containing material (12); (ii) Passing the process solution from step (i) to a series of impurity removal steps (36) thereby providing a substantially purified lithium chloride solution; and (iii) Passing the purified lithium chloride solution of step (ii) to an electrolysis step (70) thereby producing a lithium hydroxide solution.

Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.

A bilayer object consisting of a carbon fiber reinforced polymer substrate coated with a composition of matter comprising horizontally aligned exfoliated graphene sheets dispersed in an epoxy binder. A method includes depositing graphene into a hardener, mixing the hardener and the graphene to produce a homogenous composite mixture, adding a resin material to the composite mixture to produce an epoxy graphene material, coating a structure with the epoxy graphene material, aligning the graphene sheets in the in-plane orientation, and curing the epoxy graphene material.