High quality Boron Nitride Nanotubes (BNNTs) may be synthesized by heating a boron melt target via one or more laser diodes, including laser diode stacks. The use of a diode stack and beam shaping optics to irradiate the boron melt eliminates the need for a conventional laser cavity as has been employed with previous embodiments. The diode arrangements facilitate managing power distribution on the born melt(s), nitrogen gas flows, and blackbody radiation that drive the BNNT self-assembly process. These parameters may be used for controlling the proportions and characteristics of boron species, a-BN particles, h-BN nanocages, and h-BN nano sheets in the as-synthesized BNNT material while enhancing the quality of the BNNTs.

Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.

The present application relates to boron nitride nanotube (BNNT)-silicate glass composites and to methods of preparing such composites. The methods comprise mixing BNNTs that are coated with a glass former such as boron oxide with a silicate glass precursor to create a mixture; heating the mixture under conditions to obtain a molten silicate glass; and cooling the molten silicate glass under conditions to obtain the BNNT-silicate glass composite.

Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800 C. or lower while supplying a nitrogen source and a boron source into the chamber.

High quality, catalyst-free boron nitride nanotubes (BNNTs) that are long, flexible, have few wall molecules and few defects in the crystalline structure, can be efficiently produced by a process driven primarily by Direct Induction. Secondary Direct Induction coils, Direct Current heaters, lasers, and electric arcs can provide additional heating to tailor the processes and enhance the quality of the BNNTs while reducing impurities. Heating the initial boron feed stock to temperatures causing it to act as an electrical conductor can be achieved by including refractory metals in the initial boron feed stock, and providing additional heat via lasers or electric arcs. Direct Induction processes may be energy efficient and sustainable for indefinite period of time. Careful heat and gas flow profile management may be used to enhance production of high quality BNNT at significant production rates.

A method and apparatus for producing boron nitride nanotubes and continuous boron nitride nanotube yarn or tapes is provided. The apparatus includes rotating reaction tubes that allow for continuous chemical vapor deposition of boron nitride nanotubes. The rotation of the reaction tubes allows the boron nitride nanotubes to be spun into yarns or made into tapes, without post process or external rotation or spinning of the gathered nanotubes. Boron nitride nanotube yarns or tapes of great length can be produced as a result, thereby providing industry with a readily useable format for this type of material. Dopants such as carbon can be added to engineer the band gap of the nanotubes. Catalysts may be formed outside or inside the reactor.

A porous hexagonal boron nitride (h-BN) material with thermally conductive properties, includes a network of interconnected struts and nodes. The porous h-BN material is formed by depositing h-BN onto a catalyst foam using chemical vapor deposition at atmospheric pressure. The catalyst foam with the h-BN layer deposited thereon is then encapsulated with an insulating material. After the insulating material layer is cured, the h-BN structure is cut on an edge and then wet-etched to at least partially remove the catalyst foam.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

A method and apparatus for producing boron nitride nanotubes and continuous boron nitride nanotube yarn or tapes is provided. The apparatus includes rotating reaction tubes that allow for continuous chemical vapor deposition of boron nitride nanotubes. The rotation of the reaction tubes allows the boron nitride nanotubes to be spun into yarns or made into tapes, without post process or external rotation or spinning of the gathered nanotubes. Boron nitride nanotube yarns or tapes of great length can be produced as a result, thereby providing industry with a readily useable format for this type of material. Dopants such as carbon can be added to engineer the band gap of the nanotubes. Catalysts may be formed outside or inside the reactor.

Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.