The present disclosure relates to an apparatus and a method for purifying BNNT and purified BNNT, more specifically to an apparatus and a method for purifying BNNT, which allow separation of pure BNNT from synthesized BNNT wherein various impurities are included with high purification efficiency and separation of BNNT based on length, and purified BNNT. The method for purifying BNNT according to the present disclosure is characterized in that pure BNNT is separated from synthesized BNNT based on length by inputting a mobile phase including synthesized BNNT into a column chromatography device.

Disclosed in the present invention are a method for water-repellent coating treatment of a boron nitride powders and water-repellent treated boron nitride, the method comprising producing a water-repellent coating layer on the surface of the boron nitride powders by plasma treatment using a silicon-containing organic compound containing silicone, wherein the water-repellent coating layer remains on the boron nitride through chemical binding with the boron nitride even after ultrasonic water washing.

The structural integrity and viscoelastic performance of boron nitride nanotube (BNNT) materials may be improved through forming a compressed BNNT buckyweave. The BNNT buckyweave may be formed from a BNNT buckypaper having a bulk nanotube alignment (partial alignment) that may be maintained when forming the BNNT buckyweave, and compression may be parallel to and/or perpendicular to the partial alignment. The BNNT material may be viscoelastically-enhanced through, e.g., selection of synthesized BNNT material, impurity removal/reduction, BNNT alignment, isotopically enhancement, and compression relative to alignment. BNNT buckyweave s are introduced. The present approach provides viscoelastic behavior over temperatures from near absolute zero to near 1900 K. The transport of phonons along the BNNT molecules may be enhanced by utilizing isotopically enhanced BNNTs.

A boron nitride powder includes boron nitride aggregated grains that are formed by aggregation of scaly hexagonal boron nitride primary particles, the boron nitride powder having the following characteristic properties (A) to (C): (A) the primary particles of the scaly hexagonal boron nitride have an average long side length of 1.5 μm or more and 3.5 μm or less and a standard deviation of 1.2 μm or less; (B) the boron nitride aggregated grains have a grain strength of 8.0 MPa or more at a cumulative breakdown rate of 63.2% and a grain strength of 4.5 MPa or more at a cumulative breakdown rate of 20.0%; and (C) the boron nitride powder has an average particle diameter of 20 μm or more and 100 μm or less. Also provided are a method for producing the same and a thermally conductive resin composition including the same.

The present disclosure relates to a novel sp.sup.2-sp.sup.3 hybrid crystalline boron nitride and its preparation process. A novel sp.sup.2-sp.sup.3 hybrid crystalline boron nitride allotrope, named Gradia BN, is synthesized using sp.sup.2 or sp.sup.3 hybridized boron nitride as raw materials under high-temperature and high-pressure. The basic structural units of Gradia BN are composed of sp.sup.2 hybridized graphite-like structural units and sp.sup.3 hybridized diamond-like structural units. Gradia BN disclosed in the present disclosure is a class of new sp.sup.2-sp.sup.3 hybrid boron nitride allotrope, whose crystal structure can vary with the widths and/or crystallographic orientation relationships of internal sp.sup.2 and/or sp.sup.3 structural units, and may have variable physical properties.

A method of manufacturing a boron nitride nanomaterial, in which boron can be removed more certainly from a boron nitride composition comprising boron that is manufactured using, for example, the thermal plasma vapor growth method. A method of manufacturing a boron nitride nanomaterial comprising: a nanomaterial producing step of producing a boron nitride nanomaterial in which a boron grain(s) is included in a boron nitride fullerene; an oxidation treatment step of forming boron oxide on at least a surface layer of the boron grain(s) by exposing the boron nitride nanomaterial to an oxidizing environment; and a mechanical shock imparting step of applying a mechanical shock for removing the boron grain(s) from the boron nitride nanomaterial that has undergone the oxidation treatment step, while the boron nitride nanomaterial is immersed in a solvent that dissolves the boron oxide.

The present invention relates to a scanning probe microscope. The scanning probe microscope can be configured to remove a polymeric material from a surface of a nanostructure. The scanning probe microscope includes a metal coated probe tip and a voltage source. The voltage source can be configured to apply a bias voltage between the probe tip and a sample. The bias voltage can be between 0.5 V and 2 V. The scanning probe microscope further includes a sample positioner configured to position the sample in relation to the probe tip and a system controller configured to control the scanning probe microscope.

Provided is a process and an apparatus for purifying boron nitride nanotube (BNNT) materials. The process involves the use of a halogen gas to remove halogen-reactive impurities from boron nitride nanotube (BNNT) materials in a single step with minimal interactions to produce structurally pristine BNNT. Gaseous byproducts are produced that 5 can be removed without the need for solution phase treatments. Yield efficiencies and purity of recovered BNNT are high compared to the other known methods of purification for BNNT material.

An aspect of the present disclosure provides aggregate boron nitride particles in which primary hexagonal boron nitride particles are aggregated, wherein an average value of an area proportion of the primary particles in a cross section is 45% or more, a standard deviation of the area proportion of the primary particles in a cross section is less than 25, and a crushing strength is 8.0 MPa or more.

Boron nitride nanotube (BNNT)—polyimide (PI) and poly-xylene (PX) nano-composites, in the form of thin films, powder, and mats may be useful as layers in electronic circuits, windows, membranes, and coatings. The processes described chemical vapor deposition (CVD) processes for coating the BNNTs with polymeric material, specifically PI and PX. The processes rely on surface adsorption of polymeric material onto BNNTs as to modify their surface properties or create a uniform dispersion of polymer around nonotubes. The resulting functionalized BNNTs have numerous valuable applications.