A method of synthesizing a precursor for making a polymer, glass, or ceramic material is provided. The method includes reacting OPCl.sub.3 with NH.sub.3 or MNH.sub.2, where M is Li, Na, K, Mg, Ca, Ba, or combinations thereof, to form O═P(NH.sub.2).sub.3. The method then includes either: (i) reacting the O═P(NH.sub.2).sub.3 with M1NH.sub.2, where M1 is Li, Na, K, Mg, Ca, Ba, or combinations thereof, to form the precursor; or (ii) heating the O═P(NH.sub.2).sub.3 to form a branched or cyclomeric compound, and reacting the branched or cyclomeric compound with M1NH.sub.2, where M1 is Li, Na, K, Mg, Ca, Ba, or combinations thereof, to form the precursor. The precursor is an oligomer or a polymer. Uses for the precursor and the polymer, glass, or ceramic material as binders, sintering aids, adhesives, and electrolytes in battery components are also provided.

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:
R.sup.1Si(NR.sup.2R.sup.3)(NR.sup.4R.sup.5)OR.sup.6  I
where R.sup.1 is selected from hydrogen, a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are each independently selected from hydrogen, a C.sub.4 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.6 is selected from a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.2 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group.

A luminophore may have the general empirical formula X.sub.3A.sub.4Si.sub.3O.sub.8N.sub.2:E, where: X=Mg, Ca, Sr, Ba, Zn, or combinations thereof; A=Li, Na, K, Rb, Cs, Cu, Ag, or combinations thereof; Z=Al, Ga, B, or combinations thereof; and E=Eu, Ce, Yb, Mn, or combinations thereof.

A method for preparing a photomask blank comprising a transparent substrate and a chromium-containing film contiguous thereto involves the step of depositing the chromium-containing film by sputtering a metallic chromium target having an Ag content of up to 1 ppm. When a photomask prepared from the photomask blank is repeatedly used in patternwise exposure to ArF excimer laser radiation, the number of defects formed on the photomask is minimized.

Solid or liquid NH free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [N(SiH.sub.3).sub.x(SiH.sub.2).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

Solid or liquid NH free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [N(SiH.sub.3).sub.x(SiH.sub.2).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.

A phosphor having the general formula EA.sub.7A.sub.2T1.sub.t1T2.sub.t2 T3.sub.t3N.sub.nO.sub.o:RE. EA is selected from the group of divalent elements. A is selected from the group of monovalent elements. T1 is selected from the group of trivalent elements. T2 is selected from the group of tetravalent elements. T3 is selected from the group of pentavalent elements. RE is an activator element. 16+3 t1+4 t2+5 t3?3n?2 o=0. t1+t2+t3=5; n+o=16; 0?t1?4; 0?t2?5; 0?t3?5; 0?n?9; 7?o?16.

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:

R.sup.1Si(NR.sup.2R.sup.3)(NR.sup.4R.sup.5)OR.sup.6I

where R.sup.1 is selected from hydrogen, a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are each independently selected from hydrogen, a C.sub.4 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.6 is selected from a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.2 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group.

Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.