Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula
(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),
wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula
(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2−d)X.sub.d).sub.(n−1),
wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′.sub.3]; further wherein each R′ of the [SiR′.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [—NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

A method of removing one or more target impurities from crude hydrogen bis(fluorosulfonyl)imide (HFSI) using a crystallization technique. In some embodiments, the method includes contacting the crude HFSI with at least one anhydrous solvent to create a solution. The solution is caused to have a temperature sufficient to cause HFSI in the solution to crystalize while the one or more impurities remain dissolved in the mother liquor of the solution. The crystalized HFSI and the mother liquor containing the one or more impurities are separated to obtained a purified HFSI product. Purified HFSI products are also disclosed, as are systems, such as secondary batteries, incorporating purified HFSI products.

A method of removing one or more target impurities from crude hydrogen bis(fluorosulfonyl)imide (HFSI) using a crystallization technique. In some embodiments, the method includes contacting the crude HFSI with at least one anhydrous solvent to create a solution. The solution is caused to have a temperature sufficient to cause HFSI in the solution to crystalize while the one or more impurities remain dissolved in the mother liquor of the solution. The crystalized HFSI and the mother liquor containing the one or more impurities are separated to obtained a purified HFSI product. Purified HFSI products are also disclosed, as are systems, such as secondary batteries, incorporating purified HFSI products.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula

(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2d)X.sub.d).sub.(n1),

wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR.sub.3]; further wherein each R of the [SiR.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula

(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2d)X.sub.d).sub.(n1),

wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR.sub.3]; further wherein each R of the [SiR.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.