The present invention relates to a method for synthesizing a semiconductor material.

A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

Disclosed in the present disclosure is a preparation method for a blue indium phosphide quantum dot. According to the present disclosure, at a predetermined temperature, the kernel of the indium phosphide quantum dot and the first zinc precursor are mixed, and the thiol is added for reaction to form the second mixed solution containing an intermediate product of the indium phosphide quantum dot; and then the anionic precursor having a lower reaction activity than the thiol is added for continuous reaction to obtain the blue indium phosphide quantum dot having a wavelength range of 450-480 nm. The blue indium phosphide quantum dot has a pure wavelength; and when the blue indium phosphide quantum dot is applied to an electroluminescent device, the brightness is greater than 100 nits, and external quantum efficiency is high up to 1.8%, and the application range of the indium phosphide quantum dot is widened.

Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of 2.0 to 2.0 m, as measured with the back surface of the indium phosphide substrate facing upward.

The purpose of the present invention is to provide a method for producing a quantum dot having narrow particle-size distribution with high reproducibility even when an amino-substituted organophosphine precursor is used in synthesis of the quantum dot. The method for producing a quantum dot according to one aspect of the present invention includes the steps of: combining a Group IIIB precursor and an organophosphine precursor with each other to form a precursor mixture, and heating the precursor mixture to form a solution of a Group IIIB phosphide quantum dot, wherein the organophosphine precursor comprises one or more amino sub stituents, and at least one parent amine of the one or more amino sub stituents has a boiling point of 160 C. or higher at standard atmospheric pressure.

A method that uses a pressurized reactive medium composed of inert solvents such as pressurized liquid or supercritical fluid carbon dioxide (C02), and sulfur hexafluoride (SF6) and reactive dissolved species ozone (03) and/or boron trifluoride (BF3) and general boron trihalogenides (BX3) to react with two-dimensional (2D) layered materials and thereby synthesize covalently oxygen and/or BX3 functionalized exfoliated 2D layered materials. When 2D layered materials are dispersed in these reactive liquids or fluids by ultrasound sonication or high shear mixing, a simultaneous covalent functionalization and exfoliation of the 2D layered materials happens. Following attainment of the required extent of functionalization and exfoliation, the unreacted 03, BX3, SF6 and C02 can be easily removed as gases by decompression leaving behind the solid phase, thereby leading to efficient and economical production of functionalized and exfoliated 2D layered materials.

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby down-converting light from the semiconductor material.

A light-emitting structure and a display panel. The light-emitting structure includes: a first light-emitting element comprising a first light-emitting layer, a first electron transport layer, and a first cathode, the first cathode is in contact with the first electron transport layer, an energy level of conduction band minimum (CBM) of the first electron transport layer is larger than a Fermi level of the first cathode, the first electron transport layer comprises ZnMgO nanoparticles, and a molar percentage of Mg in the first electron transport layer is in a range from 10% to 20%.

Organically capped quantum dots are made by functionalizing the surfaces of QDs of various architectures with a combination of 6-mercaptohexanol (MCH) and 2-[2-(2-methoxyethoxy)-ethoxy]-acetic acid (MEEAA). Such MCH/MEEAA-capped QDs exhibit improved compatibility with solvents used in the fabrication of QD-containing films of light emitting devices, such as liquid crystal displays.