The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one reactive diluent, at least one anaerobic stabilizer, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV.

The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.

An object of the present invention is to provide a semiconductor nanoparticle having high emission efficiency and excellent durability; a method of producing the same; and a dispersion liquid and a film obtained by using a semiconductor nanoparticle. The semiconductor nanoparticle of the present invention is a semiconductor nanoparticle in which oxygen, zinc, and sulfur are detected by X-ray photoelectron spectroscopy analysis and a peak (I.sub.CH3) which is derived from a hydrocarbon group and present in a range of 2800 cm.sup.1 to 3000 cm.sup.1 and a peak (I.sub.COO) which is derived from COO.sup. and present in a range of 1400 cm.sup.1 to 1600 cm.sup.1 are detected by Fourier transform infrared spectroscopy analysis.

A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 605 nm to 655 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 28 nm or less, (2) a standard deviation of a peak wavelength of the emission spectrum is 10 nm or more and 30 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 12 nm or less.

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby down-converting light from the semiconductor material.

The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.