A system and process for producing doped carbon nanomaterials is disclosed. A carbonate electrolyte including a doping component is provided during the electrolysis between an anode and a cathode immersed in carbonate electrolyte contained in a cell. The carbonate electrolyte is heated to a molten state. An electrical current is applied to the anode, and cathode, to the molten carbonate electrolyte disposed between the anode and cathode. A morphology element maximizes carbon nanotubes, versus graphene versus carbon nano-onion versus hollow carbon nano-sphere nanomaterial product. The resulting carbon nanomaterial growth is collected from the cathode of the cell.

The invention utilizes swelling and fusion effects of graphene oxide in a solvent to implement cross-linked bonding of a graphene material itself and materials such as polymers, metal, paper, glass, carbon materials, and ceramics. The present invention not only overcomes the shortcoming in traditional adhesives of residual formaldehyde, but also has short drying time, high bonding strength and high corrosion resistance. The present invention is widely applied in the fields of aviation, aerospace, automobiles, machinery, construction, chemical, light industry, electronics, electrical appliances, and daily life, etc.

The invention utilizes swelling and fusion effects of graphene oxide in a solvent to implement cross-linked bonding of a graphene material itself and materials such as polymers, metal, paper, glass, carbon materials, and ceramics. The present invention not only overcomes the shortcoming in traditional adhesives of residual formaldehyde, but also has short drying time, high bonding strength and high corrosion resistance. The present invention is widely applied in the fields of aviation, aerospace, automobiles, machinery, construction, chemical, light industry, electronics, electrical appliances, and daily life, etc.

The disclosure provides a preparation method for a graphene material-based resistive gas sensor array and an application method thereof. The preparation method includes: adding a metal salt solution to a graphene oxide solution to obtain a mixed suspension, adjusting a pH of the mixed suspension and dispersing the mixed suspension under ultrasound, incubating the mixed suspension on a shaker, then washing it with deionized water followed by dispersing it in a deionized water to obtain metal ion-induced graphene oxide self-assembled suspension, and preparing a plurality of parts of the suspension by varying the preparation conditions; and adding the plurality of parts of metal ion-induced graphene oxide self-assembled suspension respectively to fingers of a multi-site interdigitated electrode array, and drying naturally, reducing the plurality of parts of the suspension at 60 to 120° C. for 3 to 30 min. The disclosure achieves uniform loading of a graphene material on a substrate.

The disclosure provides a preparation method for a graphene material-based resistive gas sensor array and an application method thereof. The preparation method includes: adding a metal salt solution to a graphene oxide solution to obtain a mixed suspension, adjusting a pH of the mixed suspension and dispersing the mixed suspension under ultrasound, incubating the mixed suspension on a shaker, then washing it with deionized water followed by dispersing it in a deionized water to obtain metal ion-induced graphene oxide self-assembled suspension, and preparing a plurality of parts of the suspension by varying the preparation conditions; and adding the plurality of parts of metal ion-induced graphene oxide self-assembled suspension respectively to fingers of a multi-site interdigitated electrode array, and drying naturally, reducing the plurality of parts of the suspension at 60 to 120° C. for 3 to 30 min. The disclosure achieves uniform loading of a graphene material on a substrate.

Provided herein is a method and a device for continuous synthesis of graphene. The device includes a container having a space for holding a carbon source, wherein the container has an entry opening for receiving the carbon source material, at least two electrodes for applying an electrical current through the space for joule heating the carbon source, wherein the space for joule heating the carbon source is between the at least to electrodes, and a movement component for moving the carbon source, with respect to the container, into the entry opening in a first direction and the at least two electrodes apply the electrical current in a second direction, wherein the first direction is not the same as the second direction.

Provided herein is a method and a device for continuous synthesis of graphene. The device includes a container having a space for holding a carbon source, wherein the container has an entry opening for receiving the carbon source material, at least two electrodes for applying an electrical current through the space for joule heating the carbon source, wherein the space for joule heating the carbon source is between the at least to electrodes, and a movement component for moving the carbon source, with respect to the container, into the entry opening in a first direction and the at least two electrodes apply the electrical current in a second direction, wherein the first direction is not the same as the second direction.

A process for producing a material in the form of nanosheets by ball milling of crystals of the material, wherein the ball milling takes place in the presence of a reactive gas.

A process for producing a material in the form of nanosheets by ball milling of crystals of the material, wherein the ball milling takes place in the presence of a reactive gas.

The present disclosure provides a method for preparing patterned graphene, and the method includes using a silicon carbide base as a solid-state carbon source, decomposing the silicon carbide under the action of high temperature and catalyst, to directly grow graphene on an insulating substrate. Through a first patterned trench and a second patterned trench in an accommodating passage, the pattern of the formed graphene can be directly controlled. Therefore, the present disclosure can accurately locate the position of the patterned graphene on the insulating substrate, it does not require transferring the graphene one more time, thereby avoiding contaminating the graphene and damaging its structure, and there is no need for photo-lithography, ion etching and other processes to treat the graphene in order to obtain patterned graphene, which further avoids damages to the graphene.