A process for removal of impurities, in particular of dopants, from chlorosilanes which includes the following steps: (a) heating a deposition surface (3); (b) contacting the heated deposition surface (3) with at least one gaseous chlorosilane mixture, the gaseous chlorosilane mixture including at least one chlorosilane and at least one impurity, in particular at least one dopant; (c) at least partially removing the impurity, in particular the dopant, by forming polycrystalline silicon depositions on the deposition surface (3), the polycrystalline silicon depositions being enriched with the impurity, in particular with the dopant; (d) discharging the purified gaseous chlorosilane mixture; (e) contacting the heated deposition surface (3) with an etching gas to return the polycrystalline silicon depositions and the impurity, in particular the dopant, into the gas phase to form a gaseous etching gas mixture; and (f) discharging the gaseous etching gas mixture.

The lifetime of a fluidized bed reactor containing silicon particles, for the production of chlorosilanes is greatly extended by armoring at least a portion of the reactor shell interior wall with expanded metal coated with a cement containing ceramic particles.

Yield of products of increased purity from a fluidized bed reactor where silicon is produced or consumed is enhanced by purging with inert gas, purging with hydrogen gas, and purging with a chlorosilane-containing gas. The purging with hydrogen is conducted at an elevated temperature.

A production system, production method and application of general-purpose high-purity chemicals are disclosed. The production system includes a raw material tank, and an adsorption system, a crystallizer, a first light-impurity removal tower, a first heavy-impurity removal tower, a second light-impurity removal tower, a motorized tower, a second heavy-impurity removal tower, a vapor permeation device, a membrane separation system and a filling system connected with the raw material tank in sequence. The high-purity chemicals produced by the above system have high purity and excellent quality. Compared with the prior art, the system and method designed by the present disclosure have more pertinence, integrity, progressiveness, energy-saving, precision, high safety coefficient and great industrial promotion value. And the products produced are of excellent quality, which can meet the standards applied to the manufacturing of integrated circuit electronic components and meet the high-end needs of the semiconductor industry market.

The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.

A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.

The invention relates to a process bit hydrogenating silicon tetrachloride in a reactor, wherein a reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature between 850 C. and 1600 C. by means of at least one heating element, which comprises a graphite surface, wherein the temperature of the heating element is between 850 C. and 1600 C. The process is characterized in that a nitrogen compound is added to the reactant gas in a substance amount fraction of 0.1 to 70% based on hydrogen.

A column includes a column head, a column sump and a tube-shaped column shell disposed therebetween, two or more reaction zones lying above each other which each accommodate a catalyst bed, in which catalyst beds chlorosilanes disproportionate into low-boiling silanes, which form an ascending stream of gas, and also into high-boiling silanes which form a downwardly directed stream of liquid, within the column shell and along the column axis, two or more rectificative separation zones, the reaction zones and the separation zones alternate along the column axis, the separation zones are configured such that the stream of gas and the stream of liquid meet in the separation zones, and the reaction zones are configured such that the downwardly directed stream of liquid is led through the catalyst beds, whereas the upwardly directed stream of gas passes the catalyst beds in spatial separation from the stream of liquid.

Realized is a solid substance concentration managing method which allows quick detection of an abnormality in a chemical reactor. The present invention is an invention of a solid substance concentration managing method of managing a concentration of a solid substance which is contained in a residue that is discharged in a reaction product gas processing step included in a trichlorosilane producing method, the solid substance concentration managing method including a concentration measuring step of measuring the concentration of the solid substance which is contained in an after-crystallization residue that is obtained by crystallizing part of aluminum chloride.

Realized is a residue disposal method which makes it possible to efficiently dispose of a residue without causing blockage in a pipe and possible to recover a chlorosilane compound at a higher recovery rate. The present invention is an invention of a residue disposal method of disposing of a residue which is discharged in a reaction product gas processing step included in a trichlorosilane producing method, the residue disposal method including (i) drying the residue so that the residue contains a chlorosilane compound in an amount of not more than 10% by mass and (ii) obtaining a powdered residue.