A composition comprises at least one a composition comprising at least one organosilicon compound which has two or more silicon atoms connected to either a carbon atom or a hydrocarbon moiety.

A method of producing hollow inorganic microparticles each having a raspberry-like structure is disclosed herein. The method includes forming a suspension comprising hierarchical microparticles directly from mixing of aqueous reactants, wherein the aqueous reactants are aqueous solutions each containing a reactant for forming the hierarchical microparticles, wherein the hierarchical microparticles comprise CaCO.sub.3 vaterite particles, adding a base, adding a silica precursor, wherein the base is added prior to adding the silica precursor, and removing the hierarchical microparticles with an acid to obtain the hollow inorganic microparticles each having the raspberry-like structure. A hollow inorganic microparticle having a raspberry-like structure produced according to the method is also disclosed herein.

Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

The present disclosure relates to a laminated body including at least a base material layer containing at least a flexible base material and an inorganic thin film layer, in which a distribution curve of I.sub.O2/I.sub.Si has at least one maximum value (I.sub.O2/I.sub.Si).sub.maxBD in a region BD between a depth B and a depth D, where ionic strengths of Si.sup.−, C.sup.−, and O.sub.2.sup.− are each denoted as I.sub.Si, I.sub.C, and I.sub.O2 in a depth profile measured from a surface of the laminated body on an inorganic thin film layer side in a thickness direction using a time-of-flight secondary ion mass spectrometer (TOF-SIMS), an average ionic strength in a region A1 in which an absolute value of a coefficient of variation of an ionic strength value on a base material layer side is within 5% is denoted as I.sub.CA1, a depth that is closest to the region A1 on a surface side of the inorganic thin film layer with respect to the region A1 and exhibits an ionic strength to be 0.5 times or less the I.sub.CA1 is denoted as A2, and a depth that is closest to A2 on a surface side of the inorganic thin film layer with respect to A2 and exhibits a minimum value is denoted as A3 in an ionic strength curve of C.sup.−, and a depth that is closest to A3 on a surface side of the inorganic thin film layer with respect to A3 and has a differential value of 0 or more is denoted as B, a depth that is closest to A3 on a base material layer side with respect to A3 and exhibits a maximum value d(I.sub.C).sub.max of differential distribution value is denoted as C, and a depth that is closest to C on a base material layer side with respect to C and has an absolute value of differential value to be 0.01 times or less the d(I.sub.C).sub.max is denoted as D in a first-order differential curve of ionic strength of C.sup.−.

The invention concerns a method and apparatus for producing silica concentrates from geothermal fluids containing at least 300 ppm silica, by passing the fluid at a temperature above 80° C. and at a pH reduced to between 4.0 and 7.5 through a reverse osmosis membrane. In the diagram, geothermal fluid (I) is passed to a separator (2) to be flashed to produce steam (3) and separated geothermal water (SGW) (4). The SGW (4) is passed to a heat exchanger (5) then inlet pump (7). Acid is introduced to the geothermal fluid flow at a dosing means (6) to reduce the pH and an anti-sealant may also be introduced. The geothermal fluid is then passed to a reverse osmosis unit (8) to produce a concentrate (9) and a permeate (10). Following reverse osmosis, the concentrate and permeate may be treated with other processes to produce the desired product and concentration. For example, if precipitated silica is produced, the concentrate is passed to a curing tank (11) and to a thickener (12). The precipitated silica is collected (13) while the retained fluid is removed (14).

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an .sup.1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl.sub.3, when a peak derived from N.sub.3SiH.sub.1 and N.sub.2SiH.sub.2 is referred to as Peak 1 and a peak derived from NSiH.sub.3 is referred to as Peak 2, a ratio (P.sub.1/(P.sub.1+P.sub.2)) of an area (P.sub.1) of Peak 1 relative to a total area (P.sub.1+P.sub.2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P.sub.A/P.sub.B) of an area (P.sub.A) of Region A relative to an area (P.sub.B) of Region B is greater than or equal to about 1.5.

A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.

A method for preparing two-dimensional (2D) ordered mesoporous nanosheets by inorganic salt interface-induced assembly includes the following steps: carrying out, by using a soluble inorganic salt as a substrate and an amphiphilic block copolymer as a template, uniform mass diffusion of a target precursor solution at an inorganic salt crystal interface through vacuum filtration or low-speed centrifugation; forming a single-layer ordered mesoporous structure by using the solvent evaporation-induced co-assembly (EICA) technology; and promoting, through gradient temperature-controlled Ostwald ripening, the evaporation and induced formation of an organic solvent, and removing the template in N2 to obtain a 2D single-layer ordered mesoporous nanosheet material. The assembled nanosheet material has a large pore size, regular spherical pores and orderly arrangement. By changing the type of the precursor, a variety of mesoporous metal oxides, metal elements, inorganic non-metal nanosheets are synthesized.

A pyrolysis method and a pyrolysis reactor for thermal decomposition of polymer waste materials, particularly rubber and plastics waste materials, using a fast pyrolysis process, are disclosed. The waste material is delivered to a pyrolytic chamber, and is heated to a decomposition temperature of the waste material by microwave radiation.

An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500° C. is performed using at least one organoaminodisilazane precursor having the following Formula I:

##STR00001##

wherein R.sup.1 and R.sup.2 are each independently selected from hydrogen, a linear or branched C.sub.1 to C.sub.10 alkyl group, and a C.sub.6 to C.sub.10 aryl group with a proviso that R.sup.1 and R.sup.2 cannot be both hydrogen; R.sup.3 is selected from hydrogen, a linear or branched C.sub.1 to C.sub.10 alkyl group, and a C.sub.6 to C.sub.10 aryl group; and either R.sup.1 and R.sup.2 are linked to form a cyclic ring structure or R.sup.1 and R.sup.2 are not linked to form a cyclic ring structure.