Provided is a slurry for suspension plasma spraying, which is a spray material used for suspension plasma spraying in an atmosphere including an oxygen-containing gas, contains 5-40 mass % of rare earth fluoride particles having a maximum particle diameter (D100) of 12 ?m or less, and contains one or more types of solvent selected from among water and organic solvents. A rare earth acid fluoride-containing sprayed film, in which process shift and particle generation hardly occur, can be stably formed on a base material by carrying out suspension plasma spraying in an atmosphere including an oxygen-containing gas. A spraying member provided with this sprayed film exhibits excellent corrosion resistance to halogen-based gas plasma.

Provided is a slurry for suspension plasma spraying, which is a spray material used for suspension plasma spraying in an atmosphere including an oxygen-containing gas, contains 5-40 mass % of rare earth fluoride particles having a maximum particle diameter (D100) of 12 ?m or less, and contains one or more types of solvent selected from among water and organic solvents. A rare earth acid fluoride-containing sprayed film, in which process shift and particle generation hardly occur, can be stably formed on a base material by carrying out suspension plasma spraying in an atmosphere including an oxygen-containing gas. A spraying member provided with this sprayed film exhibits excellent corrosion resistance to halogen-based gas plasma.

An yttrium oxyfluoride is represented by YOF and is stabilized by a fluoride represented by CaF.sub.2. Preferably, the number of moles of Ca with respect to 100 mol of yttrium is from 8 to 40 mol. A powder material is made of a first powder mixture including a calcium fluoride powder represented by CaF.sub.2 and an yttrium oxyfluoride powder represented by YOF, or a second powder mixture including a calcium fluoride powder represented by CaF.sub.2, an yttrium fluoride powder represented by YF.sub.3, and an yttrium oxide powder represented by Y.sub.2O.sub.3. A production method involves firing a molded product of the first or second powder mixture under predetermined conditions.

A method for producing an anion-containing inorganic solid material includes: a laminating step of forming a laminate including an electrode, a solid electrolyte layer, and a doping target layer containing a material to be doped; and a doping step of doping the material to be doped with an anion using the doping target layer as a reaction field by applying a voltage to the laminate to have a potential of the doping target layer to be higher than a potential of the electrode.

According to the present invention, a yttrium-fluoride-based sprayed coating that has a Vickers hardness of 350 or higher, includes a YF.sub.3 crystal phase having an orthorhombic crystal system, and does not include a YF.sub.3 crystal phase having a crystal system other than an orthorhombic crystal system is produced by plasma-spraying a spray powder that includes a YF.sub.3 crystal phase having an orthorhombic crystal system and does not include a YF.sub.3 crystal phase having a crystal system other than an orthorhombic crystal system. In the present invention, it is possible to provide a yttrium-fluoride-based sprayed coating that has a high coating hardness and is such that the amount of particles generated upon exposure to a halogen-based gas plasma is low, and such a sprayed coating is exceptional as a sprayed coating formed on a member for a semiconductor-producing device that is used in a semiconductor production step.

According to the present invention, a yttrium-fluoride-based sprayed coating that has a Vickers hardness of 350 or higher, includes a YF.sub.3 crystal phase having an orthorhombic crystal system, and does not include a YF.sub.3 crystal phase having a crystal system other than an orthorhombic crystal system is produced by plasma-spraying a spray powder that includes a YF.sub.3 crystal phase having an orthorhombic crystal system and does not include a YF.sub.3 crystal phase having a crystal system other than an orthorhombic crystal system. In the present invention, it is possible to provide a yttrium-fluoride-based sprayed coating that has a high coating hardness and is such that the amount of particles generated upon exposure to a halogen-based gas plasma is low, and such a sprayed coating is exceptional as a sprayed coating formed on a member for a semiconductor-producing device that is used in a semiconductor production step.

A film-forming material is provided in which a rare earth fluoride (REF.sub.3) and a rare earth oxyfluoride (RE-O-F) are observed in X-ray diffraction measurement, and S.sub.REF3/S.sub.RE-O-F that is a ratio of a crystallite size (S.sub.REF3) of REF.sub.3 relative to a crystallite size (S.sub.RE-O-F) of RE-O-F is 0.90 or more and 1.35 or less. It is preferable that the crystallite size of each of REF.sub.3 and RE-O-F is 40 nm or more and 100 nm or less. It is also preferable that primary particles observed using a scanning electron microscope (SEM) have an average particle size of 0.1 m or more and 1.0 m or less.

A film-forming material is provided in which a rare earth fluoride (REF.sub.3) and a rare earth oxyfluoride (RE-O-F) are observed in X-ray diffraction measurement, and S.sub.REF3/S.sub.RE-O-F that is a ratio of a crystallite size (S.sub.REF3) of REF.sub.3 relative to a crystallite size (S.sub.RE-O-F) of RE-O-F is 0.90 or more and 1.35 or less. It is preferable that the crystallite size of each of REF.sub.3 and RE-O-F is 40 nm or more and 100 nm or less. It is also preferable that primary particles observed using a scanning electron microscope (SEM) have an average particle size of 0.1 m or more and 1.0 m or less.

A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.