A method of manufacturing a conversion element is disclosed. A precursor material is selected from one or more of lutetium, aluminum and a rare-earth element. The precursor material is mixed with a binder and a solvent to obtain a slurry. A green body is formed from the slurry and the green body is sintered to obtain the conversion element. The sintering is performed at a temperature of more than 1720° C.

The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 μm; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 μm. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 μm or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.

A RAMO.sub.4 substrate containing an RAMO.sub.4 base material part containing a single crystal represented by the general formula RAMO.sub.4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), the RAMO.sub.4 base material part having a beveled portion at an edge portion thereof.

A RAMO.sub.4 substrate is formed from single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO.sub.4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

An inorganic oxide of the present invention has a composition represented by General formula (1): M.sub.2LnX.sub.2(AlO.sub.4).sub.3 (where M includes Ca, Ln includes Tb, and X includes at least either one of Zr and Hf). Then, a number of Tb atoms in General formula (1) is 0.1 or more to 1 or less. Moreover, a crystal structure of the inorganic oxide is a garnet structure. A phosphor made of this inorganic oxide is capable of being excited by short-wavelength visible light, and can radiate narrow-band green light.

Disclosed are a composite oxide which is capable of maintaining a large volume of pores even used in a high temperature environment, and which has excellent heat resistance and catalytic activity, as well as a method for producing the composite oxide and a catalyst for exhaust gas purification employing the composite oxide. The composite oxide contains cerium and at least one element selected from aluminum, silicon, or rare earth metals other than cerium and including yttrium, at a mass ratio of 85:15 to 99:1 in terms oxides, and has a property of exhibiting a not less than 0.30 cm.sup.3/g, preferably not less than 0.40 cm.sup.3/g volume of pores with a diameter of not larger than 200 nm, after calcination at 900° C. for 5 hours, and is suitable for a co-catalyst in a catalyst for vehicle exhaust gas purification.

[Objective] To provide a ceramic emitter that exhibits high radiation intensity and excellent wavelength selectivity.

[Solution] A ceramic emitter includes a polycrystalline body that has a garnet structure represented by a compositional formula R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element) and has pores with a porosity of 20-40%. The pores have a portion where the pores are connected to one another but not linearly continuous, inside the polycrystalline body.

Provided is a near-infrared light emitting fluorescent material including an oxide containing Gd, Cr and Al, in which a molar ratio of Cr is in a range of 0.0085 or more and 0.05 or less when a total molar ratio of Gd and Cr is defined as 1 in 1 mol of the chemical composition of the near-infrared light emitting fluorescent material, and having a light emission peak wavelength in a range of 690 nm or more and 790 nm or less, as excited with light having a light emission peak wavelength in a range of 380 nm or more and 480 nm or less.

Described herein is a plasma resistant protective coating composition and bulk composition that provides enhanced erosion and corrosion resistance upon the coating composition's or the bulk composition's exposure to harsh chemical environment (such as hydrogen based and/or halogen based chemistries) and/or upon the coating composition's or the bulk composition's exposure to high energy plasma. Also described herein is a method of coating an article with a plasma resistant protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits a reduced number of yttrium based particles.

Described herein is a plasma resistant protective coating composition and bulk composition that provides enhanced erosion and corrosion resistance upon the coating composition's or the bulk composition's exposure to harsh chemical environment (such as hydrogen based and/or halogen based chemistries) and/or upon the coating composition's or the bulk composition's exposure to high energy plasma. Also described herein is a method of coating an article with a plasma resistant protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits a reduced number of yttrium based particles.