Preparation of halogen-doped silica is described. The preparation includes doping silica with high halogen concentration, sintering halogen-doped silica to a closed-pore state, and subjecting the closed-pore silica body to a thermal treatment process and/or a pressure treatment process. The temperature of thermal treatment is sufficiently high to facilitate reaction of unreacted doping precursor trapped in voids or interstices of the glass structure, but is below temperatures conducive to foaming. Core canes or fibers drawn from halogen-doped silica subjected to the thermal treatment and/or pressure treatment show improved optical quality and possess fewer defects. The thermal treatment and/or pressure treatment is particularly advantageous when used for silica doped with high concentrations of halogen.

Provided is a silica glass member which exhibits high optical transparency to vacuum ultraviolet light and has a low thermal expansion coefficient of 4.010.sup.7/K or less at near room temperature, particularly a silica glass member which is suitable as a photomask substrate to be used in a double patterning exposure process using an ArF excimer laser (193 nm) as a light source. The silica glass member is used in a photolithography process using a vacuum ultraviolet light source, in which the fluorine concentration is 1 wt % or more and 5 wt % or less, and the thermal expansion coefficient at from 20 C. to 50 C. is 4.010.sup.7/K or less.

One aspect relates to a method for the manufacture of doped quartz glass. Moreover, one aspect relates to quartz glass obtainable according to the method including providing a soot body, treating the soot body with a gas, heating an intermediate product and vitrifying an intermediate product.

A doped silica-titania glass article is provided that includes a glass article having a glass composition comprising (i) a silica-titania base glass, (ii) a fluorine dopant, and (iii) a second dopant. The fluorine dopant has a concentration of fluorine of up to 5 wt. % and the second dopant comprises one or more oxides selected from the group consisting of Al, Nb, Ta, B, Na, K, Mg, Ca and Li oxides at a total oxide concentration from 50 ppm to 6 wt. %. Further, the glass article has an expansivity slope of less than 0.5 ppb/K.sup.2 at 20 C. The second dopant can be optional. The composition of the glass article may also contain an OH concentration of less than 100 ppm.

The Ti.sup.3+ ions present in Ti-doped silica glass cause a brown staining of the glass, causing inspection of the lens to become more difficult. Known methods for reducing Ti.sup.3+ ions in favor of Ti.sup.4+ ions in Ti-doped silica glass include a sufficiently high proportion of OH-groups and carrying out an oxygen treatment prior to vitrification, which both have disadvantages. In order to provide a cost-efficient production method for Ti-doped silica glass, which at a hydroxyl group content of less than 120 ppm shows an internal transmittance (sample thickness 10 mm) of at least 70% in the wavelength range of 400 nm to 1000 nm, the TiO.sub.2SiO.sub.2 soot body is subjected to a conditioning treatment with a nitrogen oxide prior to vitrification. The blank produced in this way from Ti-doped silica glass has the ratio Ti.sup.3+/Ti.sup.4+510.sup.4.

A method for producing a silica glass blank co-doped with titanium and fluorine for use in EUV lithography includes (a) producing a TiO.sub.2SiO.sub.2 soot body by flame hydrolysis of silicon- and titanium-containing precursor substances, (b) fluorinating the TiO.sub.2SiO.sub.2 soot body to form a fluorine-doped TiO.sub.2SiO.sub.2 soot body, (c) treating the fluorine-doped TiO.sub.2SiO.sub.2 soot body in a water vapor-containing atmosphere to form a conditioned soot body, and (d) vitrifying the conditioned soot body to form the blank. The blank has an internal transmission of at least 60% in the wavelength range of 400 to 700 nm at a sample thickness of 10 mm, a mean OH content in the range of 10 to 100 wt. ppm and a mean fluorine content in the range of 2,500 to 10,000 wt. ppm. Titanium is present in the blank in the oxidation forms Ti3.sup.+ and Ti.sup.4+.