The invention provides a method of making a coated glass article in which a gaseous mixture is formed including an aluminum-containing compound, a boron-containing compound, and an inert gas. This gaseous mixture is delivered to a location above a major surface of a glass substrate to deposit a coating comprising aluminum, boron, and oxygen over the major surface of the glass substrate.

A coated glazing includes a transparent glass substrate and a coating located on the glass substrate. The coating is provided with at least the following layers in sequence starting from the glass substrate: a first layer having a refractive index of more than 1.6, an optional second layer having a refractive index that is less than the refractive index of the first layer, a third layer based on tin dioxide, a fourth layer based on an oxide of silicon, and a fifth layer based on titanium dioxide, wherein the fifth layer is photocatalytic.

Provided is an optical film (composite tungsten oxide film containing cesium, tungsten, and oxygen), a sputtering target, and a method of producing an optical film by which film formation conditions can be easily obtained. An optical film of the present invention has transmissivity in a visible wavelength band, has absorbance in a near-infrared wavelength band, and has radio wave transparency, characterized in that the optical film comprises cesium, tungsten, and oxygen, and a refractive index n and an extinction coefficient k of the optical film at each of wavelengths [300 nm, 350 nm, 400 nm, 450 nm, . . . , 1700 nm] specified at 50 nm intervals in a wavelength region from 300 nm to 1700 nm are set respectively within specified numerical ranges.

Provided is an optical film (composite tungsten oxide film containing cesium, tungsten, and oxygen), a sputtering target, and a method of producing an optical film by which film formation conditions can be easily obtained. An optical film of the present invention has transmissivity in a visible wavelength band, has absorbance in a near-infrared wavelength band, and has radio wave transparency, characterized in that the optical film comprises cesium, tungsten, and oxygen, and a refractive index n and an extinction coefficient k of the optical film at each of wavelengths [300 nm, 350 nm, 400 nm, 450 nm, . . . , 1700 nm] specified at 50 nm intervals in a wavelength region from 300 nm to 1700 nm are set respectively within specified numerical ranges.

An antireflection structure comprising a transparent substrate having a plurality of holes with U-shaped or V-shaped cross-sectional shapes perpendicular to a flat surface portion and a metal oxide film disposed on the surface portion of the transparent substrate and in the space portions formed in an upward direction from the bottom portions of holes in the transparent substrate, wherein the average diameter of the openings of the holes is 50 nm to 300 nm, the average distance between the center points of openings of the adjacent holes is 100 nm to 400 nm, and the depth of each hole from the surface portion of the substrate is 80 nm to 250 nm; and the thickness of the metal oxide film disposed in each of the space portions increases as the depth of each of the holes becomes larger, thereby reducing the difference in depth between the holes from the uppermost surface portion of the metal oxide film disposed on the surface portion to the surface portions of the metal oxide films in the space portions.

An antireflection structure comprising a transparent substrate having a plurality of holes with U-shaped or V-shaped cross-sectional shapes perpendicular to a flat surface portion and a metal oxide film disposed on the surface portion of the transparent substrate and in the space portions formed in an upward direction from the bottom portions of holes in the transparent substrate, wherein the average diameter of the openings of the holes is 50 nm to 300 nm, the average distance between the center points of openings of the adjacent holes is 100 nm to 400 nm, and the depth of each hole from the surface portion of the substrate is 80 nm to 250 nm; and the thickness of the metal oxide film disposed in each of the space portions increases as the depth of each of the holes becomes larger, thereby reducing the difference in depth between the holes from the uppermost surface portion of the metal oxide film disposed on the surface portion to the surface portions of the metal oxide films in the space portions.

A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.

A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.

A window has an ion exchange substrate with a top surface. To improve robustness, the top surface has a polycrystalline aluminum oxide film formed from a plurality of crystals. At least 95% of the plurality of crystals in the aluminum oxide film has a largest dimension of no greater than about 10 nanometers. In addition, both the ion exchange substrate and aluminum oxide film are transparent or translucent.

A window has an ion exchange substrate with a top surface. To improve robustness, the top surface has a polycrystalline aluminum oxide film formed from a plurality of crystals. At least 95% of the plurality of crystals in the aluminum oxide film has a largest dimension of no greater than about 10 nanometers. In addition, both the ion exchange substrate and aluminum oxide film are transparent or translucent.