A method of manufacturing a glass article comprises: (A) forming a first layer of catalyst metal on a glass substrate; (B) heating the glass substrate; (C) forming a second layer of an alloy of a first metal and a second metal on the first layer; (D) heating the glass substrate, thereby forming a glass article comprising: (i) the glass substrate; (ii) an oxide of the first metal covalently bonded thereto; and (iii) a metallic region bonded to the oxide, the metallic region comprising the catalyst, first, and second metals. In embodiments, the method further comprises (E) forming a third layer of a primary metal on the metallic region; and (F) heating the glass article thereby forming the glass article comprising: (i) the oxide of the first metal covalently bonded the glass substrate; and (ii) a new metallic region bonded to the oxide comprising the catalyst, first, second, and primary metals.

A method of manufacturing a glass article comprises: (A) forming a first layer of catalyst metal on a glass substrate; (B) heating the glass substrate; (C) forming a second layer of an alloy of a first metal and a second metal on the first layer; (D) heating the glass substrate, thereby forming a glass article comprising: (i) the glass substrate; (ii) an oxide of the first metal covalently bonded thereto; and (iii) a metallic region bonded to the oxide, the metallic region comprising the catalyst, first, and second metals. In embodiments, the method further comprises (E) forming a third layer of a primary metal on the metallic region; and (F) heating the glass article thereby forming the glass article comprising: (i) the oxide of the first metal covalently bonded the glass substrate; and (ii) a new metallic region bonded to the oxide comprising the catalyst, first, second, and primary metals.

Electronic device encapsulation process, assisted by a laser, for obtaining a sealed electronic device, wherein said process comprises: providing a first substrate and a second substrate, the second substrate being transparent in the emission wavelength of the laser, depositing an intermediate bonding contour layer on one or both of the substrates; depositing electronic device components on one or both of the substrates; joining the first substrate and second substrate with the electronic device components in-between the substrates; using the laser to direct a laser beam onto the intermediate bonding contour layer with a predefined progressive scan pattern, such that the intermediate bonding contour layer is progressively melted and forms a seal, bonding the substrates together. Preferably, each linear laser pass overlaps longitudinally the previous and the following linear laser passes along said contour. Preferably, each linear laser pass is followed by a partial backtrack of the each linear laser pass, such that a part of the linear laser pass overlaps longitudinally the previous linear laser pass.

A method is provided for producing a patterned glass wafer for packaging electronic devices in a wafer assembly. The method includes placing a glass sheet between two mold halves and heating until the glass sheet softens, while the mold halves are pressed against one another so that the glass sheet is reshaped and forms a patterned glass wafer. The first mold half has an array of projections and the second mold half has an array of recesses. The mold halves are arranged and shaped so that the recesses and projections oppose each other. The projections introduce cavities into the glass sheet during the reshaping and with the glass flowing into the recesses of the second mold half during the reshaping. The recesses are deep enough for the glass to at least partially not come in contact therewith and to form a convexly shaped glass surface in each recess.

A synthetic quartz glass lid for use in optical device packages is prepared by furnishing a synthetic quartz glass lid precursor comprising a synthetic quartz glass substrate (1) and a metal or metal compound film (2), and forming a metal base adhesive layer (3) on the metal or metal compound film (2). The metal or metal compound film contains Ag, Bi, and at least one element selected from P, Sb, Sn and In.

The present invention relates to structure including an interfacial seal between a glass-ceramic component and a metal component, as well as methods for forming such structures. In particular embodiments, the interfacial seal includes a metal oxide. Such interfacial seals can be beneficial for, e.g., hermetic seals between a glass-ceramic component and a metal component.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

The present invention relates to structure including an interfacial seal between a glass-ceramic component and a metal component, as well as methods for forming such structures. In particular embodiments, the interfacial seal includes a metal oxide. Such interfacial seals can be beneficial for, e.g., hermetic seals between a glass-ceramic component and a metal component.

A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

The present invention relates to structure including an interfacial seal between a glass-ceramic component and a metal component, as well as methods for forming such structures. In particular embodiments, the interfacial seal includes a metal oxide. Such interfacial seals can be beneficial for, e.g., hermetic seals between a glass-ceramic component and a metal component.