Patent classifications
C04B35/58007
Physical Forms of MXene Materials Exhibiting Novel Electrical And Optical Characteristics
The present invention(s) is directed to novel conductive M.sub.n+1X.sub.n(T.sub.s) compositions exhibiting high volumetric capacitances, and methods of making the same. The present invention(s) is also directed to novel conductive M.sub.n+1X.sub.n(T.sub.s) compositions, methods of preparing transparent conductors using these materials, and products derived from these methods.
Physical forms of MXene materials exhibiting novel electrical and optical characteristics
The present invention(s) is directed to novel conductive M.sub.n+1X.sub.n(T.sub.s) compositions exhibiting high volumetric capacitances, and methods of making the same. The present invention(s) is also directed to novel conductive M.sub.n+1X.sub.n(T.sub.s) compositions, methods of preparing transparent conductors using these materials, and products derived from these methods.
Method and Apparatus for Fabricating Fibers and Microstructures from Disparate Molar Mass Precursors
The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.
NANOPARTICLES IN BINDER JETTING FABRICATION OF METAL OBJECTS
Systems, methods, components, and materials are disclosed for stereolithographic fabrication of three-dimensional, dense objects. A resin including at least one component of a binder system and dispersed particles can be exposed to an activation light source. The activation light source can cure the at least one component of the binder system to form a green object, which can include the at least one component of the binder system and the particles. A dense object can be formed from the green object by removing the at least one component of the binder system in an extraction process and thermally processing particles to coalesce into the dense object.
Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element
A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A.sub.1+αBO.sub.x+αN.sub.y wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.
METAL NITRIDES AND/OR METAL CARBIDES WITH NANOCRYSTALLINE GRAIN STRUCTURE
Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.
CORROSION RESISTANT BEARING ELEMENTS, BEARING ASSEMBLIES, BEARING APPARATUSES, AND MOTOR ASSEMBLIES USING THE SAME
Embodiments disclosed herein relate to bearing assemblies and methods of manufacturing. In an embodiment, a bearing assembly includes a support ring and bearing elements. The bearing elements are mounted to and distributed circumferentially about an axis of the support ring. At least one of the bearing elements includes a polycrystalline diamond table, a substrate bonded to the polycrystalline diamond table, bonding region defined by the substrate and the polycrystalline diamond table, and a corrosion resistant region. The corrosion resistant region includes a corrosion resistant material that covers at least a portion of at least one lateral surface of the bonding region. The corrosion resistant region prevents corrosion of at least some material in the bonding region covered by the corrosion resistant region (e.g., during use). Other embodiments employ one or more sacrificial anodes as an alternative to or in combination with the corrosion resistant region.
Semiconductor devices and method of manufacturing the same
A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.
Metal nitrides and/or metal carbides with nanocrystalline grain structure
Disclosed is a composition having nanoparticles or particles of a refractory metal, a refractory metal hydride, a refractory metal carbide, a refractory metal nitride, or a refractory metal boride, an organic compound consisting of carbon and hydrogen, and a nitrogenous compound consisting of carbon, nitrogen, and hydrogen. The composition, optionally containing the nitrogenous compound, is milled, cured to form a thermoset, compacted into a geometric shape, and heated in a nitrogen atmosphere at a temperature that forms a nanoparticle composition comprising nanoparticles of metal nitride and optionally metal carbide. The nanoparticles have a uniform distribution of the nitride or carbide.