Patent classifications
C04B37/025
METHOD FOR ATOMIC DIFFUSION BONDING AND BONDED STRUCTURE
Atomic diffusion bonding is carried out using a bonding film comprising a nitride formed at a bonding surface. Operating in a vacuum chamber, a bonding film comprising a nitride is formed on each of flat surfaces of two substrates that each have the flat surface, and, by overlapping the two substrates so the bonding films formed on the two substrates are in contact with each other, the two substrates are joined by the generation of atomic diffusion at a bonding interface between the bonding films.
Copper/ceramic bonded body, insulating circuit board, method for producing copper/ceramic bonded body, and method for producing insulating circuit board
This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of nitrogen-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, between the copper member and the ceramic member, an active metal nitride layer containing nitrides of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and a Mg solid solution layer in which Mg is solid-dissolved in a Cu matrix is formed between the active metal nitride layer and the copper member, and Cu-containing particles composed of either one or both of Cu particles and compound particles of Cu and the active metal are dispersed in an interior of the active metal nitride layer.
Joining Method
Provided is a method that allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic; arranging the first member to be joined and the second member to be joined so that they are in contact with each other via the oxygen ion conductor layer; connecting the first member to be joined to one of a positive electrode side and a negative electrode side of a voltage application device and the second member to be joined to the other; and applying a voltage between the first member to be joined and the second member to be joined to join the first member to be joined and the second member to be joined together.
BONDED BODY, CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING BONDED BODY
A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Ag, Cu, Ti, and a first element being one or two selected from Sn and In, a Ti alloy of Ti and at least one selected from Ag, Cu, Sn, and In existing at a bonding boundary between the copper plate and the bonding layer, and the Ti alloy existing over not less than 30% per a length of 30 μm at the bonding boundary.
SUPERHARD CONSTRUCTIONS AND METHODS OF MAKING SAME
A super hard polycrystalline construction is disclosed as comprising a first region comprising a body of thermally stable polycrystalline diamond material comprising a plurality of intergrown grains of diamond material; a second region forming a substrate to the first region; and a third region interposed between the first and second regions. The third region extends across a surface of the second region along an interface. The interface comprises at least a portion having an uneven topology, and the third region comprises a diamond composite material including a first phase comprising a plurality of non-intergrown super hard grains, said super hard grains comprising diamond grains; and a matrix material. The superhard material and matrix material of the third region form a diamond composite material which is more acid resistant than polycrystalline diamond material having a binder-catalyst phase comprising cobalt, and/or more acid resistant than cemented tungsten carbide material.
JOINT SURFACE COATINGS FOR CERAMIC COMPONENTS
An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.
Method for manufacturing optical element and optical element
A method for manufacturing an optical element is a method for manufacturing an optical element in which laser light is transmitted, reciprocated, or reflected, and the method includes a first step of obtaining a bonded element formed by subjecting a first element part and a second element part, both being transparent to laser light, to surface activated bonding with a non-crystalline layer interposed therebetween; and after the first step, a second step of crystallizing at least a portion of the non-crystalline layer by raising the temperature of the bonded element. In the second step, the temperature of the bonded element is raised to a predetermined temperature that is lower than the melting points of the first element part and the second element part.
Seal system having silicon layer and barrier layer
A seal system includes a ceramic component, a metallic component, a silicon-containing layer, and a barrier layer. The ceramic component has a first surface region that defines a first surface roughness. The metallic component is situated adjacent to the first surface region and has a second surface region facing the first surface region. The silicon-containing layer is on the first surface region of the ceramic component and has a contact surface that defines a second surface roughness which is less than the first surface roughness. The barrier layer is on the metallic component and in contact with the silicon-containing layer and serves to limit interaction between silicon of the silicon-containing layer and the metallic component. The barrier layer includes at least one of alumina or MCrAlY.
Nickel-carbon and nickel-cobalt-carbon brazes and brazing processes for joining ceramics and metals and semiconductor processing and industrial equipment using same
A brazing process using Nickel(Ni)-Carbon as graphite(Cg) alloys, Ni-Cg-Molybdenum(Mo) alloys, and Ni-Cobalt(Co)-Cg-Mo alloys for brazing together ceramics, ceramics to metals, metals to metals. Semiconductor processing equipment made with the use of Ni-Cg alloys, such as heaters and chucks. Semiconductor processing equipment components and industrial equipment components using a highly wear resistant surface layer, such as sapphire, joined to a substrate such as a ceramic, with a Ni-Cg alloy braze.
Support Substrate and Method for Producing a Support Substrate
A support substrate (1), in particular a metal-ceramic substrate, as a support for electric components, comprising: —at least one metal layer (10) and—an insulating element (30), in particular a ceramic element, a glass element, a glass ceramic element, and/or a high temperature-resistant plastic element. The at least one metal layer (10) and the insulating element (30) extend along a main extension plane (HSE) and are arranged one over the other in a stacking direction (S) running perpendicularly to the main extension plane (HSE), wherein in a completed support substrate (1), a binding layer (12) is formed between the at least one metal layer (10) and the insulating element (30), and an adhesive layer (13) of the binding layer (12) has a surface resistance which is greater than 5 Ohm/sq.