Provided is a structure including a first member (2); a second member (3) disposed opposite to the first member (2); and a glass layer (4) disposed between the first member (2) and the second member (3) so as to bond the first member (2) and the second member (3). A glass transition point of the glass layer (4) is lower than a temperature of the glass layer (4) under operation. In the glass layer (4), at least either of ceramic and metallic particles 4b, 4c is dispersed. In a temperature region lower than the glass transition point of the glass layer (4), a thermal expansion coefficient thereof falls in between thermal expansion coefficients of the first member (2) and the second member (3). This allows thermal strain caused within the structure (1) to be reduced when the structure (1) is operated at a higher temperature than a room temperature.

A method for the assembly of a metal part and a ceramic part, including the following steps: supplying a solid ceramic part of the alumina type; supplying a solid metal part, the metal being selected from platinum and tantalum, or an alloy including a majority of one of these metals; depositing at least one layer, called interface layer, on at least one of the solid parts, the interface layer containing magnesium oxide; bringing into contact the solid metal part and the solid ceramic part such that the interface layer is located between the solid parts; and hot densification under pressure of the solid parts brought into contact, to create a close bond between the solid parts and form a spinel from the interface layer. An electrical device, such as a capacitive sensor having a sensitive part produced according to the present method, is also provided.

This copper/ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of aluminum nitride, in which the copper member and the ceramic member are bonded to each other, and a Mg—O layer is formed at a bonding interface between the copper member and the ceramic member.

A joined body 10 includes a ceramic body 12, a metal member 14, and a joint portion 15 that joins the ceramic body 12 and the metal member 14 together. The joint portion 15 includes a first joint layer 16 joined to the ceramic body 12 and a second joint layer 18 joined to the metal member 14. The first joint layer 16 is disposed on the ceramic body 12 side and contains an alloy that contains Fe and Cr as main components, and a compound having a thermal expansion coefficient of 4.0×10.sup.−6 (/° C.) or lower is dispersed in the first joint layer 16. The second joint layer 18 is disposed on the metal member 14 side, contains an alloy that contains Fe and Cr as main components, and has a larger thermal expansion coefficient than the first joint layer 16.

A wiring substrate includes an insulating substrate, a conductor layer and an interlayer. The insulating substrate contains AlN. The conductor layer contains Cu. The interlayer is located between the insulating substrate and the conductor layer. In the interlayer, between a first region near the insulating substrate and a second region near the conductor layer, Cu concentration is higher in the second region than in the first region, and Al concentration is higher in the first region than in the second region.

A method for manufacturing an optical element is a method for manufacturing an optical element in which laser light is transmitted, reciprocated, or reflected, and the method includes a first step of obtaining a bonded element formed by subjecting a first element part and a second element part, both being transparent to laser light, to surface activated bonding with a non-crystalline layer interposed therebetween; and after the first step, a second step of crystallizing at least a portion of the non-crystalline layer by raising the temperature of the bonded element. In the second step, the temperature of the bonded element is raised to a predetermined temperature that is lower than the melting points of the first element part and the second element part.

A carrier substrate (1) that includes an insulation layer (11) and a metal layer (12), wherein a flank profile (2), in particular an etching flank profile, at least zonally borders the metal layer (12) in a primary direction (P) extending parallel to the main extension plane (HSE), wherein, viewed in the primary direction (P), the flank profile (2) extends from a first edge (15) on an upper side (31) of the metal layer (12), which faces away from the insulation layer (11), to a second edge (16) on a lower side (32) of the metal layer (12), which faces the insulation layer (11), characterized in that the flank profile (2), viewed in the primary direction (P), has at least one local maximum (21) and at least one local minimum (22).

An electronic device housing, an electronic device and a compound body are provided. The electronic device housing comprises a frame; a sealing layer, disposed on at least a part of an outer surface of the frame, and including a plurality of sub-sealing layers laminated in sequence; and a back case, attached to the frame by the sealing layer, wherein two adjacent sub-sealing layers have different compositions.

A wiring substrate includes an insulating substrate, a conductor and an Ni film. The insulating substrate has a first surface and a second surface on a side opposite the first surface, and contains AlN. The conductor is disposed on the first surface and contains Cu. The Ni film is disposed so as to extend across an upper surface and a side surface of the conductor to the first surface. Ti oxide is scattered so as to be at a plurality of points on the first surface.

A method allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic and a metal plating layer on a surface of the other; arranging them so that they are in contact with each other; connecting one of the first member to be joined and the second member to be joined on which the metal plating layer is provided to the negative electrode side of the voltage application device and the other to the positive electrode side; and applying a voltage between the first member to be joined and the second member to be joined to join them together.