A composite article includes a substrate and a powder-derived composite coating on the substrate. The composite coating includes discrete regions of a first material and discrete regions of a second material. At least one of the first material or the second material is a chemical precursor.

A composite article includes a substrate and a powder-derived composite coating on the substrate. The composite coating includes discrete regions of a first material and discrete regions of a second material. At least one of the first material or the second material is a chemical precursor.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

Thermally-conductive ceramic and ceramic composite components suitable for high temperature applications, systems having such components, and methods of manufacturing such components. The thermally-conductive components are formed by a displacive compensation of porosity (DCP) process and are suitable for use at operating temperatures above 600° C. without a significant reduction in thermal and mechanical properties.

A coated component, along with method of forming the same, is provided. The coated component may include a substrate having a surface, a silicon-based bond coating on the surface of the substrate, and an EBC on the silicon-based bond coating. The silicon-based bond coating may include a silicon-phase contained within a refractory phase. The silicon-phase, when melted, is contained within the refractory phase and between the surface of the substrate and an inner surface of the environmental barrier coating. Such a coated component may be, in particular embodiments, a turbine component.

A coated component, along with method of forming the same, is provided. The coated component may include a substrate having a surface, a silicon-based bond coating on the surface of the substrate, and an EBC on the silicon-based bond coating. The silicon-based bond coating may include a silicon-phase contained within a refractory phase. The silicon-phase, when melted, is contained within the refractory phase and between the surface of the substrate and an inner surface of the environmental barrier coating. Such a coated component may be, in particular embodiments, a turbine component.

A cubic boron nitride sintered material comprises cubic boron nitride particles, a binding phase, and an interfacial phase. The interfacial phase intervenes between the cubic boron nitride particles and the binding phase. The interfacial phase includes aluminum, nitrogen, boron, and oxygen. A total of an average value of the atomic concentrations of aluminum included in the interfacial phase and an average value of the atomic concentrations of nitrogen included in the interfacial phase is 50.0 at % or more. A ratio of an average value of the atomic concentrations of nitrogen included in the interfacial phase to an average value of the atomic concentrations of boron included in the interfacial phase is more than 1.00.