Specific organometallic compounds of Formula I: Q.sub.x-Sn-(A.sup.1R.sup.1′.sub.z).sub.4-x or Formula II: Sn(NR.sup.2(CH.sub.2).sub.nA.sup.2).sub.2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.

Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.

The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.

Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers.

A method of controlling a substrate etching process includes disposing a bottom surface or a top surface of a substrate adjacent to volume of etching fluid to produce an etchant-substrate interface and heating the etchant-substrate interface via spatially controlled electromagnetic radiation. The method also includes transmitting a monitoring beam through the substrate, the substrate and volume of etching fluid being at least partially transparent at the wavelength range of the monitoring beam and measuring a property of the substrate surface during the substrate etching process via the monitoring beam to produce a real-time measured property for the substrate. A corresponding etching system and computer-program product is also disclosed herein.

The method for shaping a carrier sheet of high hardness, in particular a gres sheet, comprises the steps of providing a solid carrier sheet of high hardness having a thickness of at least 6 mm; covering a front surface of the carrier sheet with a removable vibration-absorbing protective layer; providing the surface of the protective layer remote from the carrier sheet with a glass sheet; on the back surface of the carrier sheet opposite the front surface thereof, forming a plurality of cavities according to a predetermined pattern. The step of forming comprises forming the cavities by milling so that in each cavity the remaining thickness of the carrier sheet along the front surface is at least 3 mm and at most 5 mm; during milling, at least one physical property of the vibration of the carrier sheet is continuously measured on the front surface of the carrier sheet by means of at least one sensor; on the basis of at the least one physical property measured by the sensor, adjusting the operation of the milling tool so that the vibration properties of the carrier sheet do not exceed predetermined threshold values; by applying a first optical method, taking a first 3D image of the surface roughness of the milled cavities; further reducing the surface roughness of the cavities by shot blasting, wherein during the shot blasting, the operation of the shot blasting tool is controlled using parameters determined on the basis of the first 3D image taken during the first scanning; by applying a second 3D scanning, taking a second 3D image of the surface roughness of the cavities treated by shot blasting; and by applying laser beam milling, further reducing the surface roughness of the cavities, wherein the operation of the laser beam milling tool is controlled on the basis of the second 3D image taken after the laser beam milling by the second 3D scanning so that the surface roughness of the cavities falls in the submicron range.

Various embodiments for a median barrier finishing machine are described. A median barrier finishing machine may include a housing configured to encapsulate at least a portion of a median barrier, where the housing comprises a first vertical wall, a second vertical wall, and a horizontal wall. The median barrier finishing machine may include at least one adjustable member configured to couple the housing to the vehicle and retain the housing a predetermined distance relative to the vehicle while the vehicle is in motion. Further, the median barrier finishing machine may include at least one finishing device disposed within the housing, where the at least one finishing device is configured to contact a surface of a median barrier at least partially positioned within the housing and treat the surface as the vehicle moves the housing along a length of the median barrier.

A waterproofing system including a functional layer S1 including 10-80 wt.-% of at least one thermoplastic polymer P1 and 10-80 wt.-% of at least one solid particulate filler F, wherein the surface of the functional layer S1 has an Auto-correlation length of waviness W(Sal) of at least 50 μm. Further, a method for producing a waterproofing system and to the use of a mechanical surface treatment step to increase the waviness factor, determined as the ratio of the Root mean square roughness of waviness W(Sq) to the square of the Auto-correlation length of waviness W(Sal), of a surface of a functional layer S1.