A ceramic spinner and a method of making the same is provided. The ceramic spinner includes: a top portion with a first opening, the first opening having a first diameter; a base portion with a second opening, the second opening having a second diameter smaller than the first diameter; a cylindrical portion extending between the top portion and the base portion, the cylindrical portion including a peripheral outer wall, a peripheral inner wall, and a plurality of through holes extending between the peripheral outer wall and the peripheral inner wall. The cylindrical portion may include a material having a module of rupture (MOR) exceeding 100 MPa, a Mohs hardness exceeding 8, or a Young's Modulus exceeding 250 GPa, or any combinations thereof.

Disclosed herein are methods for functionalizing the surface of a biomedical implant. The biomedical implant may be a zirconia-toughened alumina implant surface functionalized with silicon nitride powder for promoting osteogenesis.

A method for applying a coating 1 to a surface 2 of a mullite material 3 is specified, which comprises pretreating the surface 2 of the mullite material 3 by means of a plasma-chemical process in which molecular hydrogen is excited in such a way that plasma-activated hydrogen is produced S1, and applying an aluminum oxide-containing layer 4 by means of a PVD process to the pretreated surface 2 of the mullite material 3 S2. Furthermore, a mullite material 3 with a coating and a gas turbine component with such a mullite material 3 are specified.

A method of controlling a substrate etching process includes disposing a bottom surface or a top surface of a substrate adjacent to volume of etching fluid to produce an etchant-substrate interface and heating the etchant-substrate interface via spatially controlled electromagnetic radiation. The method also includes transmitting a monitoring beam through the substrate, the substrate and volume of etching fluid being at least partially transparent at the wavelength range of the monitoring beam and measuring a property of the substrate surface during the substrate etching process via the monitoring beam to produce a real-time measured property for the substrate. A corresponding etching system and computer-program product is also disclosed herein.

Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

A cutting tool, including a silicon nitride (Si.sub.3N.sub.4) ceramic substrate, and a diamond film coated on the surface of the Si.sub.3N.sub.4 ceramic substrate. The diamond film has a thickness of 7-12 μm. The cutting tool includes a tool nose, a blade, and a handle. The blade has a rake angle γ of 5-15°, a clearance angle α of 10-14°, and a helix angle of 15-45°. The blade includes four cutting edges.

A cutting tool, including a silicon nitride (Si.sub.3N.sub.4) ceramic substrate, and a diamond film coated on the surface of the Si.sub.3N.sub.4 ceramic substrate. The diamond film has a thickness of 7-12 μm. The cutting tool includes a tool nose, a blade, and a handle. The blade has a rake angle γ of 5-15°, a clearance angle α of 10-14°, and a helix angle of 15-45°. The blade includes four cutting edges.

A encapsulation system incorporating a polymer repair mixture with quartz sand that enables an underlying monolithic membrane to fully encapsulate an entire mat into a concrete surface allowing for resilient bond which holds up to the weight and force of Rhinoceros, Hippopotamus, Giraffe and Elephants. Use of such durable flooring of the present invention may be suitable to a diverse array of situations requiring a hard-wearing material, such as zoos, veterinary hospitals, animal transport trailers, quality stall systems, healthcare, arena footing, supermarkets, gymnasiums and schools, as well as other commercial, institutional and sporting uses.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.