C04B41/5346

MILDEWPROOF AND ANTIROT HIGH-STRENGTH CEMENT PARTICLE BOARD AND PREPARATION METHOD THEREOF

Technical fields of building external wall decoration and material manufacturing, providing a mildewproof and antirot high-strength cement particle board and a preparation method thereof. The preparation method includes: (1) sequentially carbonizing and water-washing a shaving, and mixing the obtained carbonized shaving with a cement gelling agent, a curing agent aqueous solution and water to obtain a mixture; (2) molding the mixture to obtain a pre-molded material; and (3) sequentially curing and drying the pre-molded material to obtain the mildewproof and antirot high-strength cement particle board. Compared to ordinary cement particle board, which is not subjected to carbonization treatment and water-washing, the cement particle board of the present invention can effectively avoid mildew and rot, and can significantly improve the mechanical strength and durability thereof, helping to extend the service life of the cement particle board.

MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
20240007023 · 2024-01-04 · ·

A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 m or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.

A METHOD FOR PRODUCING CERAMIC TILES
20240002303 · 2024-01-04 ·

A method for producing ceramic tiles, comprising the steps of providing a ceramic mixture, forming a raw tile with a body having an upper surface based on said mixture, and firing said raw tile to produce said ceramic tile, wherein the method comprises a step of producing a relief structure on said upper surface and wherein said structure is produced after said forming step and before said firing step.

BODY OBTAINED BY PROCESSING SOLID CARBON-CONTAINING MATERIAL, PRODUCING METHOD THEREOF, AND PRODUCING APPARATUS THEREOF

A method for producing a body obtained by processing a solid carbon-containing material, the method includes: preparing the solid carbon-containing material composed of a material having at least a surface containing solid carbon; forming a gas phase fluid containing at least one of an active gas or an active plasma which are active against the solid carbon; and processing the solid carbon-containing material by injecting the gas phase fluid onto at least a part of the surface of the solid carbon-containing material.

BODY OBTAINED BY PROCESSING SOLID CARBON-CONTAINING MATERIAL, PRODUCING METHOD THEREOF, AND PRODUCING APPARATUS THEREOF

A method for producing a body obtained by processing a solid carbon-containing material, the method includes: preparing the solid carbon-containing material composed of a material having at least a surface containing solid carbon; forming a gas phase fluid containing at least one of an active gas or an active plasma which are active against the solid carbon; and processing the solid carbon-containing material by injecting the gas phase fluid onto at least a part of the surface of the solid carbon-containing material.

THERMALLY GUIDED CHEMICAL ETCHING OF A SUBSTRATE AND REAL-TIME MONITORING THEREOF
20200300787 · 2020-09-24 ·

A method of controlling a substrate etching process includes disposing a bottom surface or a top surface of a substrate adjacent to volume of etching fluid to produce an etchant-substrate interface and heating the etchant-substrate interface via spatially controlled electromagnetic radiation. The method also includes transmitting a monitoring beam through the substrate, the substrate and volume of etching fluid being at least partially transparent at the wavelength range of the monitoring beam and measuring a property of the substrate surface during the substrate etching process via the monitoring beam to produce a real-time measured property for the substrate. A corresponding etching system and computer-program product is also disclosed herein.

METHOD OF SMOOTHING AND PLANARIZING OF ALTIC SURFACES
20200273715 · 2020-08-27 ·

Techniques herein provide effective smoothing and planarization of various surfaces. Techniques include using multiple particle beams to correct different aspects of a given workpiece. A workpiece needing correction from scratches and roughness is treated with a first particle beam that reduces scratches on a working surface of the workpiece using an inert beam. The workpiece is also treated with a second particle beam that is chemically reactive and reduces step-height values across the working surface of the workpiece, thereby producing a surface with reduced scratches and roughness.

Method of processing a ceramic matrix composite (CMC) component

A method of processing a ceramic matrix composite (CMC) component includes extracting silicon from a surface region of the CMC component such that free silicon is present in the surface region at a reduced amount of about 5 vol. % or less. The extraction comprises contacting the surface region with a wicking medium comprising an element reactive with silicon. The extraction is carried out at an elevated temperature prior to assembling the CMC component with a metal component.

Inert gas-assisted laser machining of ceramic-containing articles

An article including a ceramic material and featuring a machined surface that is characteristic of cold ablation laser machining, wherein the machined surface exhibits no visible oxidation.

A laser machining apparatus and technique based on cold-ablation, but modified or augmented with an inert assist gas, which minimizes the deleterious surface modifications and mitigates the oxide formation associated with laser machining.

LASER TEXTURING OF CERAMIC-CONTAINING ARTICLES

A laser texturing process modifies the surface of a semiconductor wafer-handling device so that flatness is maintained, but controlled roughness is imparted to prevent unwanted wafer sticking. The laser texturing may be from a thermal laser, a cold ablation laser, or either laser modified with an inert cover gas. The laser etches or burns away a portion or fraction of a flat surface, thereby reducing the area of contact to the semiconductor wafer and thereby reducing friction and sticking. The etched or burned-away portion is thus at a reduced, relieved or lower elevation than the unaffected portion. The laser texturing may take the form of a plurality of channels cut into the surface, or a plurality of holes. Laser machining can yield a semiconductor wafer handling device having finer detail than can be produced by other shaping techniques, with feature sizes on the order of 50 microns being achievable.