The invention relates to a method of surface marking a mechanical part with a predefined graphical representation, the method comprising using a laser source to apply a single laser pulse to an outside surface of a part for marking, with a mask being interposed between the laser source and the outside surface of the part, the mask having a predefined graphical representation, and the laser pulse having power flux density of at least 20 MW/cm.sup.2 and a duration less than or equal to 100 ns.

In a method of an embodiment, a pressure sensor is selected from first and second pressure sensors according to a set flow rate. A measurable maximum pressure of the second pressure sensor is higher than a measurable maximum pressure of first pressure sensor. The target pressure of a chamber is determined according to the set flow rate. Until the pressure of the chamber reaches the target pressure after gas is started to be output from the flow rate controller to the chamber at an output flow rate according to the set flow rate and a pressure controller provided between the chamber and an exhaust apparatus is closed, the pressure of the chamber is measured by the selected pressure sensor. The output flow rate of the flow rate controller is determined from a rate of rise of the pressure of the chamber.

Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

Disclosed herein are methods for functionalizing the surface of a biomedical implant. The biomedical implant may be a zirconia-toughened alumina implant surface functionalized with silicon nitride powder for promoting osteogenesis.

A method of controlling a substrate etching process includes disposing a surface or a surface of a substrate adjacent to etching fluid to produce an etchant-substrate interface and placing an electromagnetic radiation emitter on a moveable positioner. The method includes focusing electromagnetic radiation from the electromagnetic radiation emitter to a portion of the etchant-substrate interface. The portion of the etchant-substrate interface has a surface area of not less than 0.05 squared micrometers and not greater than 80 squared millimeters. The method includes selectively heating the portion of the etchant-substrate interface and transmitting a monitoring beam through the substrate. The method includes measuring a property of the substrate via the monitoring beam.

A process for providing a fiber cement product is provided the process comprising the steps of:providing an uncured fiber cement product;curing said uncured fiber cement product;drying said cured fiber cement product to obtain a humidity of said cured fiber cement product being less than or equal to about 8% w;abrasive blasting at least part of the surface of said dried fiber cement product.

Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

The purpose of the present is to provide a modified AlN source for suppressing downfall defects. This manufacturing method of a modified aluminum nitride source involves a heat treatment step for heat treating an aluminum nitride source and generating an aluminum nitride sintered body.

A method of making a sintered ceramic body comprising the steps of disposing a ceramic powder (5) inside an inner volume of a spark plasma sintering tool (1), wherein the tool comprises: a die (2) comprising a sidewall comprising inner and outer walls, wherein the inner wall has a diameter defining the inner volume; upper and lower punches (4,4) operably coupled with the die, wherein each of the punches have an outer wall defining a diameter less than the diameter of the die inner wall, thereby creating a gap (3) between the punches and the inner wall when at least one of the punches are moved within the inner volume, and the gap is from 10 m to 70 m wide; creating vacuum conditions inside the inner volume; moving at least one of the punches to apply pressure to the ceramic powder while heating, and sintering; and lowering the temperature of the sintered body.

The purpose of the present is to provide a modified AlN source for suppressing downfall defects. This manufacturing method of a modified aluminum nitride source involves a heat treatment step for heat treating an aluminum nitride source and generating an aluminum nitride sintered body.