Systems and methods for making ceramic powders are provided. The method for forming a ceramic powder includes: preparing a precursor mixture, wherein the preparing comprises adding at least one additive to a plurality of reagents, wherein the at least one additive includes at least one of: an oxide, a salt, a pure metal, or an alloy of elements ranging from atomic numbers 21 through 30, 39 through 51, and 57 through 77 and combinations thereof; and carbothermically reacting the precursor mixture to form a ceramic powder, wherein, due to the preparing step, the precursor mixture comprises a sufficient amount of the at least one additive to form the ceramic powder, wherein the ceramic powder comprises: (a) a morphology selected from the group consisting of irregular, equiaxed, plate-like, and combinations thereof; and (b) a particle size distribution selected from the group consisting of fine, intermediate, coarse, and combinations thereof.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

A metallurgical vessel structure and method is provided for producing low-impurity Magnesia-Carbon reclaimed aggregate suitable for reuse in the production of high purity Magnesia-Carbon refractory. A metallurgical vessel is assembled with a non-reactive or chemically similar backup lining. The entire height of the working lining wall is Magnesia-Carbon brick suitable for reuse. The working lining is exposed to a metal making high temperature process, and the working lining is sequentially demolished. Due to the assembly of vessel, metallurgical practice, and ease of demolishing the vessel, there is little to no need for sorting, such that the used Magnesia-Carbon brick are easily converted into low impurity Magnesia-Carbon reclaimed aggregate. A refractory composed of low-impurity Magnesia aggregate reclaimed from the method is also contemplated.

A nanoparticle cluster reduction method yields a new composition of matter including a large percentage (e.g., 75% or higher percentage) of primary nanoparticles in the new composition of matter. The particle reduction method reduces the size of nanoparticle clusters in material of the new composition of matter, allows particle reduction of specific nanoparticle cluster sizes, and allows particle reduction to primary nanoparticles. This new composition of matter can include a high permittivity and high resistivity dielectric compound. This new composition of matter, according to certain examples, has high permittivity, high resistivity, and low leakage current. In certain examples, the new composition of matter constitutes a dielectric energy storage device that is a battery with very high energy density, high operating voltage per cell, and an extended battery life cycle. An example method can include a controlled gas evolution reaction to reduce the size of nanoparticle clusters.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A.sub.3XZ.sub.n-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

A honeycomb structure includes: an outer peripheral wall; and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the plurality of cells extending from one end face to the other end face to form a flow path for a fluid. The partition walls and the outer peripheral wall include ceramics containing at least silicon. A content of silicon in the ceramics is 30% by mass or more. A concentration of at least one dopant in the silicon is from 10.sup.16 to 5×10.sup.20/cm.sup.3.

The present invention is able to provide an LGPS-based solid electrolyte characterized by: satisfying a composition of Li.sub.uSn.sub.vP.sub.2S.sub.yX.sub.z (6≤u≤14, 0.8≤v≤2.1, 9≤y≤16, 0<z≤1.6; X represents Cl, Br, or I); and having, in X-ray diffraction (CuKα: λ=1.5405 Å), peaks at least at positions of 2θ=19.80°±0.50°, 20.10°±0.50°, 26.60°±0.50°, and 29.10°±0.50°.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-δX.sub.δS.sub.1-ηY.sub.η(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

A solid electrolyte for an all-solid-state sodium battery, represented by formula: Na.sub.3−xSb.sub.1−xα.sub.xS.sub.4, wherein α is selected from elements that provide Na.sub.3−xSb.sub.1−xα.sub.xS.sub.4 exhibiting a higher ionic conductivity than Na.sub.3SbS.sub.4, and x is 0<x<1.