Patent classifications
C04B2235/661
ELECTRO-CERAMIC MATERIAL COMPONENT, ITS MANUFACTURING METHOD AND METHOD OF CONVERTING ENERGY
The ceramic material element includes a main phase of orthorhombic perovskite-structure and a secondary phase due to a heat treatment within 700° C. to 850° C. for a first period followed by a second period within 1140° C. to 1170° C., from a mixture of materials A1, A2, A3, A4 and A5 excluding lead, the materials A1, A2, A3, A4 and A5 having molar ratios R1, R2, R3, R4 and R5, respectively, where the material A1 comprises potassium, the material A2 comprises sodium, the material A3 comprises barium, the material A4 comprises niobium, and the material A5 comprises nickel, and the molar ratio R1 is in a range 0.29-0.32, the molar ratio R2 is in a range 0.20-0.23, the molecular ratio R3 is in a range 0.01-0.02, the molar ratio R4 is in a range 0.54-0.55, and the molar ratio R5 is in a range 0.006-0.011, while a relative ratio of R1/R2 is in the range 1.24-1.52, and a relative ratio of R4/R2 is in the range 2.32-2.62. The ceramic material element converts optical radiation energy and mechanical vibration energy into electric energy.
Sintered ceramic and ceramic sphere
Provided are a sintered ceramic and a ceramic sphere which are inhibited from suffering surface peeling due to fatigue resulting from repetitions of loading and can attain an improvement in dimensional accuracy when subjected to surface processing and which have excellent wear resistance and durability.
Armor component
An armor component including a body having a first portion including calcium boride compounds include non-stoichiometric calcium boride (CaB.sub.x) and stoichiometric calcium boride (CaB.sub.6) and having a density of at least about 80% theoretical density. In one aspect, the first portion can include a first phase comprising silicon carbide (SiC) and a second phase comprising calcium boride (CaB.sub.6). In another aspect, the first portion can further include a third phase comprising boron carbide (B.sub.4C).
Process for the preparation of gadolinium oxysulfide (Gd2O2S) scintillation ceramics
The present disclosure is directed to a rapid process for the preparation of gadolinium oxysulfide having a general formula of Gd.sub.2O.sub.2S, referred to as GOS, scintillation ceramics by using the combination of spark plasma primary sintering (SPS) and hot isostatic pressing secondary sintering.
Metal detectible ceramic material and method for making the same
A method for producing a cermet composition, including mixing a first predetermined amount of a yttria stabilized zirconia powder with between 2 and 8 weight percent mu-metal powder to define a homogeneous admixture, oxidizing the mu-metal in the admixture, forming the homogeneous admixture into a green body, calcining the green body in a first reducing atmosphere to remove oxygen from the oxidized mu-metal to yield a calcined body, and sintering the calcined body in a second reducing atmosphere to yield a densified body having no more than 0.8% porosity. The densified body has a plurality of mu-metal particles distributed therethrough, a hardness of at least 1450 HV, flexural strength of at least 200 kPSI, and a relative permeability μ/μ.sub.o of at least 850.
REFRACTORY METAL SILICIDE NANOPARTICLE CERAMICS
Particles of a refractory metal or a refractory-metal compound capable of decomposing or reacting into refractory-metal nanoparticles, elemental silicon, and an organic compound having a char yield of at least 60% by weight are combined to form a precursor mixture. The mixture is heating, forming a thermoset and/or metal nanoparticles. Further heating form a composition having nanoparticles of a refractory-metal silicide and a carbonaceous matrix. The composition is not in the form of a powder
SILICON NITRIDE CERAMIC MATERIAL FOR MOBILE PHONE REAR COVER AND PREPARATION METHOD THEREFOR
A silicon nitride ceramic material for a mobile phone rear cover and a preparation method therefor. The method comprises: using a mixture of a silicon source, a colorant, and a sintering aid as raw materials, mixing the raw material components, and performing shaping and sintering to obtain the silicon nitride ceramic material. The toughness of the silicon nitride ceramic material can reach more than 12 MPa.Math.m.sup.1/2; the thermal conductivity thereof can reach 40 to 70 W/m.Math.K; and a dielectric loss thereof is 10.sup.−4.
POLYCRYSTALLINE CUBIC BORON NITRIDE AND METHOD FOR MANUFACTURING THE SAME
There is provided a polycrystalline cubic boron nitride containing a cubic boron nitride at a content greater than or equal to 98.5% by volume, the polycrystalline cubic boron nitride having a dislocation density less than or equal to 8×10.sup.15/m.sup.2.
TUNGSTEN OXIDE SPUTTERING TARGET
A W.sub.18O.sub.49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio I.sub.S(103)/I.sub.S(010) of a diffraction intensity I.sub.S(103) of a (103) plane to a diffraction intensity I.sub.S(010) of a (010) plane of W.sub.18O.sub.49 of the sputtering surface is 0.38 or less, a ratio I.sub.C(103)/I.sub.C(010) of a diffraction intensity I.sub.C(103) of the (103) plane to a diffraction intensity I.sub.C(010) of the (010) plane of W.sub.18O.sub.49 of the cross section is 0.55 or more, and an area ratio of W.sub.18O.sub.49 phase of a surface parallel to the sputtering surface is 37% or more.
SINTERED POLYCRYSTALLINE CUBIC BORON NITRIDE MATERIAL
A method of making a polycrystalline cubic boron nitride (PCBN), material is provided. The matrix precursor powder comprises an aluminium compound. The method comprises mixing matrix precursor powder comprising particles having an average particle size no greater than 250 nm, with between 30 and 40 volume percent of cubic boron nitride (cBN) particles having an average particle size of at least 4 μm, and then spark plasma sintering the mixed particles. The spark plasma sintering occurs at a pressure of at least 500 MPa, a temperature of no less than 1050° C. and no more than 1500° C. and a time of no less than 1 minute and no more than 3 minutes.