Patent classifications
C04B2235/81
MODIFIED NI-ZN FERRITES FOR RADIOFREQUENCY APPLICATIONS
Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Co.sup.+2 such that the relaxation peak associated with the Co.sup.+2 substitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band.
PARAMAGNETIC GARNET-TYPE TRANSPARENT CERAMIC, MAGNETO-OPTICAL MATERIAL, AND MAGNETO-OPTICAL DEVICE
A paramagnetic garnet-type transparent ceramic characterized by being a sintered body of a terbium-containing composite oxide represented by formula (1) in which the linear transmittance at a wavelength of 1,064 nm at an optical path length of 15 mm is 83% or higher.
(Tb.sub.1-x-ySc.sub.xCe.sub.y).sub.3(Al.sub.1-zSc.sub.z).sub.5O.sub.12(1)
(In the formula, 0<x<0.08, 0y0.01, 0.004<z<0.16.)
HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K- radiation.
METHODS OF IDENTIFYING AND PREPARING A CERAMIC MATERIAL EXHIBITING AN ELECTRIC FIELD INDUCED STRAIN
The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.04; and ii) determining a molar ratio of at least one additional non-tetragonal perovskite compound to the combination of perovskite compounds from step i) at the determined molar ratio which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a pseudo-cubic phase having an axial ratio c/a of from 0.995 to 1.005 and/or a rhombohedral angle of 900.5 degrees.
Piezoelectric material, piezoelectric element, and electronic apparatus
The present invention provides a lead-free piezoelectric material having a high piezoelectric constant over a wide operating temperature region. Therefore, the present invention relates to a piezoelectric material including a perovskite-type metal oxide represented by general formula (1) below as a main component, wherein the average valence, of Sn contained in the general formula (1) lies between 2 and 4.
(Ba.sub.vCa.sub.wSn.sub.xTi.sub.yZr.sub.z)O.sub.3 (where 0.620v0.970,0.010w0.200,0.030x0.230,0.865y0.990,0z0.085, and 1.986v+w+x+y+z2.100)General Formula (1)
Gas turbine part and method for manufacturing such gas turbine part
The present disclosure relates to a gas turbine part, which can be exposed to high temperatures and centrifugal forces within a gas turbine. The gas turbine part can include plural sliced parts, wherein at least one of said sliced parts is made from a ternary ceramic called MAX phase, having the formula M.sub.n+1AX.sub.n, where n=1, 2, or 3, M is an early transition metal such as Ti, V, Cr, Zr, Nb, Mo, Hf, Sc, Ta, and A is an A-group element such as Al, Si, P, S, Ga, Ge, As, Cd, In, Sn, Tl, Pb, and X is C and/or N.
Heater for semiconductor manufacturing apparatus
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K- radiation.
Process of Manufacturing a Conversion Element, Conversion Element and Light Emitting Device Comprising the Conversion Element
A method of manufacturing a conversion element is disclosed. A precursor material is selected from one or more of lutetium, aluminum and a rare-earth element. The precursor material is mixed with a binder and a solvent to obtain a slurry. A green body is formed from the slurry and the green body is sintered to obtain the conversion element. The sintering is performed at a temperature of more than 1720 C.
Magnetooptical material, manufacturing method therefor, and magnetooptical device
This invention provides a transparent magnetooptical material that is suitable for use in a magnetooptical device such as an optical isolator. Said magnetooptical material comprises either a transparent ceramic consisting primarily of a complex oxide that can be represented by formula (1) or a single crystal of such a complex oxide. Said magnetooptical material does not absorb fiber-laser light in the 0.9-1.1 m wavelength range, does not cause heat lensing, and has a higher Verdet constant than TGG crystals, with a Verdet constant of at least 0.14 min/(Oe.Math.cm) at a wavelength of 1,064 nm.
Tb.sub.2R.sub.2O.sub.7(1)
(In formula (1), R represents one or more elements selected from among the group consisting of silicon, germanium, titanium, tantalum, tin, hafnium, and zirconium (but not silicon only, germanium only, or tantalum only)).
CHALCOGEN-CONTAINING COMPOUND, ITS PREPARATION METHOD AND THERMOELECTRIC ELEMENT COMPRISING THE SAME
A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: M.sub.yV.sub.1-ySn.sub.xSb.sub.2Te.sub.x+3, wherein V is vacancy, M is at least one alkali metal, x6, and 0<y0.4.