Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Co.sup.+2 such that the relaxation peak associated with the Co.sup.+2 substitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band.

An NTC compound, a thermistor and a method for producing a thermistor are disclosed. In an embodiment an NTC compound includes a ceramic material of a Mn—Ni—O system as a main constituent, wherein the Mn—Ni—O system has a general composition Ni.sub.xMn.sub.2O.sub.4-δ, wherein y corresponds to a molar fraction of Ni of a total metal content of the ceramic material of the Mn—Ni—O system, which is defined as c(Ni):(c(Ni)+c(Mn)), and wherein the following applies: 0.500<x<0.610 and 0.197<y<0.240.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: M.sub.yV.sub.1-ySn.sub.xSb.sub.2Te.sub.x+3, wherein V is vacancy, M is at least one alkali metal, x≥6, and 0<y≤0.4.

A complex oxide ceramic according to an embodiment is a complex oxide ceramic including a rare earth element and at least one element selected from among molybdenum, tungsten, and vanadium. An example of the rare earth element is at least one species selected from among La, Ce, and Gd.

A thermal barrier coating material contains a compound X that is a cation-deficient-type defective perovskite complex oxide. Unit cells of the compound X each include six oxygen atoms and has a structure in which two octahedrons sharing one oxygen atom are aligned. In the compound X, central axes of two octahedrons that belong to adjacent unit cells, respectively, and are adjacent to each other are inclined relative to each other. A plurality of sets of the two octahedrons that belong to the adjacent unit cells, respectively, and are adjacent to each other are arranged to form a periodic structure in which octahedrons having different inclinations are alternately arranged, and the compound X has a boundary surface at which a periodicity of the periodic structure changes, in a crystal structure thereof.

An active material for a fluoride ion secondary battery includes a composite fluoride which contains: an alkali metal or NH.sub.4; a transition metal; and fluorine.

Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

Disclosed are a pseudo-ternary thermoelectric material, a method of manufacturing the pseudo-ternary thermoelectric material, a thermoelectric element, and a thermoelectric module. The pseudo-ternary thermoelectric material includes bismuth (Bi), antimony (Sb), tellurium (Te), and selenium (Se), and a composition ratio thereof is Bi.sub.xSb.sub.2-xTe.sub.3 in which 0.3≤x≤0.6 or (Bi.sub.2Te.sub.3).sub.1-x-y(Sb.sub.2Te.sub.3).sub.x(Sb.sub.2Se.sub.3).sub.y in which 0<x<1 and 0.001≤y≤0.05.

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

Disclosed herein are doped thermoelectric ceramic oxide compositions comprising a calcium cobaltite ceramic. The doped thermoelectric ceramic oxide compositions can have a formula Ca.sub.3-xM.sup.2.sub.xCo.sub.4O.sub.9M.sup.1.sub.y, where M.sup.1 represents a first metal dopant, M.sup.2 represents a second metal dopant, x is a number having a value of from about 0.00 to about 3.00, and y is a number having a value of from about 0.01 to about 0.50. The doped thermoelectric ceramic oxide compositions have an increased energy conversion efficiency as compared to an undoped or conventional thermoelectric ceramic oxide materials. Also disclosed are methods for making the doped thermoelectric ceramic oxide compositions. Products and devices are disclosed comprising the thermoelectric ceramic oxide compositions, e.g., solid-state conversion devices that can utilize heat to generate electricity. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.