According to an aspect of the invention, there is provided a plasma-resistant member including: a base member; and a layer structural component formed at a surface of the base member, the layer structural component including an yttria polycrystalline body and being plasma resistant, the layer structural component including a first uneven structure, and a second uneven structure formed to be superimposed onto the first uneven structure, the second uneven structure having an unevenness finer than an unevenness of the first uneven structure.

A cubic boron nitride sintered material tool contains a plurality of cBN grains. cBN grains located on a surface of the cutting edge contain a cubic boron nitride phase, and a hexagonal boron nitride phase. When a ratio I.sub.π*/I.sub.σ* between an intensity of a π* peak derived from a π bond of hBN in the hexagonal boron nitride phase and an intensity of a σ* peak derived from a σ bond of hBN in the hexagonal boron nitride phase and a σ bond of cBN in the cubic boron nitride phase is determined by measuring an energy loss associated with excitation of K-shell electrons of boron, the ratio I.sub.π*/I.sub.σ* of the cBN grain on the surface of the cutting edge is 0.1 to 2, and the ratio I.sub.π*/I.sub.σ* of the cBN grain at a depth position of 5 μm from the surface of the cutting edge is 0.001 to 0.1.

The present disclosure relates to a mold for glass forming, wherein the mold comprises a ceramic material, and wherein the ceramic material comprises aluminum nitride and hexagonal boron nitride, and wherein the ceramic material comprises from 50 to 80% by weight of aluminum nitride and from 20 to 50% by weight of hexagonal boron nitride, based on the total weight of the ceramic material. The present disclosure further relates to a process for using such molds to form curved glass plates.

A particulate filter and method of manufacture. The particulate filter comprises a ceramic honeycomb body comprising a plurality of intersecting walls that define a plurality of channels extending longitudinally though the ceramic honeycomb body. The intersecting walls comprise a porous ceramic material having a microstructure that comprises an interconnected network of porous spheroidal ceramic beads. The microstructure has a total porosity defined as the sum of an open intrabead porosity of the beads and an interbead porosity defined by interstices between the beads in the interconnected network. The microstructure has a bimodal pore size distribution in which an intrabead median pore size of the intrabead porosity is from 1.5 μm to 4 μm and an interbead median pore size of the interbead porosity is from 6 μm to 20 μm.

Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α.sub.1/α.sub.2<0.9 and relational expression (2) 0.7<α.sub.3/α.sub.4<0.9 holds, where α.sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and α.sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and α.sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and α.sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.

A sintered body includes a solid solution containing cobalt and iron, with the balance being zirconia. The total content of cobalt in terms of CoO and iron in terms of Fe.sub.2O.sub.3 is more than 0.1 wt % and less than 3.0 wt %, and the proportion of cobalt regions larger than 5.5 μm.sup.2 in an elemental map obtained using an electron probe microanalyzer is 25% or less.

A module and a process for forming a monolithic substantially closed-porosity silicon carbide fluidic module having a tortuous fluid passage extending through the module, the tortuous fluid passage having an interior surface, the interior surface having a surface roughness in the range of from 0.1 to 10 μm Ra. The process includes positioning a positive fluid passage mold within a volume of silicon carbide powder, the powder coated with a binder; pressing the volume of silicon carbide powder with the mold inside to form a pressed body; heating the pressed body to remove the mold; and sintering the pressed body.

The present invention is directed to a method for producing a silicon nitride sintered material, the method including heating a molded article, which contains a silicon nitride powder having a β phase ratio of 80% or more, a dissolved oxygen content of 0.2% by mass or less, and a specific surface area of 5 to 20 m.sup.2/g, and a sintering auxiliary containing a compound having no oxygen bond, and which has an overall oxygen content controlled to be 1 to 15% by mass and an aluminum element overall content controlled to be 800 ppm or less, to a temperature of 1,200 to 1,800° C. in an inert gas atmosphere under a pressure of 0 MPa.Math.G or more and less than 0.1 MPa.Math.G to sinter the silicon nitride.

In the present invention, there can be provided a method for producing a silicon nitride sintered material, which method is advantageous in that a silicon nitride sintered material having high thermal conductivity can be obtained even when using a silicon nitride powder having a high β phase ratio and conducting calcination under normal pressure or substantially normal pressure.

Object

To provide a liquid contact member having high hydrophilicity and exhibiting high dirt removal efficiency by cleaning.

Solution

A liquid contact member includes a ceramic including a plurality of crystal grains and a grain boundary phase, and the concentration of silicon on a liquid contact surface of the ceramic is higher than that of silicon on a virtual internal surface parallel to the liquid contact surface.