A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.

A ceramic-metal structure in which a metallic body (2) is inserted into or disposed above a through hole (4h) of a ceramic substrate (4) and which includes an annular pad layer (6) disposed around the through hole; an annular ring member (8) joined to the pad layer via a first brazing filler portion (10) and having a coefficient of thermal expansion smaller than that of the metallic body; a second brazing filler portion (12) intervening between the ring member and metallic body; and brazing filler flow prevention layers (7a, 7b) covering an outer surface of the pad layer so as to expose a central region (6c) of the outer surface of the pad layer facing the first brazing filler portion. The first brazing filler portion joins the central region and the ring member without projecting to a radially inner or outer side of the flow prevention layers.

The disclosure provides seals for devices that operate at elevated temperatures and have reactive metal vapors, such as lithium, sodium or magnesium. In some examples, such devices include energy storage devices that may be used within an electrical power grid or as part of a standalone system. The energy storage devices may be charged from an electricity production source for later discharge, such as when there is a demand for electrical energy consumption.

A method for producing a gas-tight metal-ceramic join is disclosed. In an embodiment a method includes providing at least one ceramic main body having a first end face and a second end face, applying a metallization to at least a partial region of the end faces of the main body, applying a nickel layer to the metallized partial region of the end faces, applying a brazing paste to the metallized partial region of the first end face and/or the second end face of the main body, drying the brazing paste, and firing the brazing paste.

A ceramic circuit substrate and power module with excellent heat cycle resistance characteristics, which is formed by bonding a ceramic substrate and a copper plate via a brazing material including Ag, Cu, and an active metal, wherein the bond void fraction is no greater than 1.0% and the diffusion distance of the Ag, which is a brazing material component, is 5-20 m. Also, a method for manufacturing a ceramic circuit substrate characterized in that the heating time in a temperature range 400-700 C. in a process for raising the temperature to a bonding temperature is 5-30 minutes and bonding is performed by maintaining the bonding temperature at 720-800 C. for 5-30 minutes.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a MgN compound phase extending from a ceramic member side to a copper member side is present at a bonded interface between the copper member and the ceramic member, and at least a part of the MgN compound phase enters into the copper member.

A ceramic substrate manufacturing method and a ceramic substrate manufactured thereby, may include a seed layer, a brazing filler layer, and a metal foil that are laminated on a ceramic substrate and that are brazed such that the metal foil is firmly bonded to the ceramic substrate by a brazing joint layer. Such methods and devices may substantially improve the adhesion of the metal foil and the ceramic substrate.

There is provided a copper/ceramic bonded body of the present invention in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded to each other, in which an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic member side between the copper member and the ceramic member, a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper member, and the active metal is present in the Mg solid solution layer.

Methods of forming a cutting element include sintering diamond particles at a temperature of at least about 1400 C. under a pressure of at least about 10 GPa in the absence of a metal solvent catalyst so as to form a polycrystalline diamond compact (PDC), providing a barrier material over at least a portion of the PDC, providing a carbide material and a metal binder comprising at least one transition metal element over the barrier material and the PDC, and performing a second sintering process comprising sintering the carbide material, the metal binder, the barrier material, and the PDC at a temperature of at least about 1400 C. under a pressure of at least about 5 GPa to form the cutting element. At least a portion of the PDC proximate an exposed exterior surface of the PDC may be at least substantially free of the metal binder.

An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes: an upper surface; a lower surface; and a side surface 1 connecting the upper surface with the lower surface; the ceramic substrate includes: a lowest portion; a side surface 2 connecting the lowest portion with the side surface 1 of the conductor layer; and a bonding surface at a position higher than the lowest portion, the bonding surface being bonded to the lower surface of the conductor layer; an absolute value (||) is 20 or less on average; and the side surface 1 has a receding portion from an end of the upper surface in the normal direction relative to the tangential line of the contour of the conductor layer as viewed in plane.