In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of aluminum-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, at a bonded interface between the copper member and the ceramic member, an active metal compound layer containing an active metal compound that is a compound of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and in the active metal compound layer Al and Cu are present at a grain boundary of the active metal compound.

A method for manufacturing a metal-ceramic substrate (1) includes providing a ceramic layer (10), a metal layer (20) and a solder layer (30) coating the ceramic layer (10) and/or the metal layer (20) and/or the solder layer (30) with an active metal layer (40), arranging the solder layer (30) between the ceramic layer (10) and the metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the solder layer and the active metal layer (40), wherein a solder material of the solder layer (30) is free of a melting point lowering material and bonding the metal layer (20) to the ceramic layer (10) via the solder system (35) by means of an active solder process.

A solder material (30) for bonding a metal layer (20) to a ceramic layer (10), in particular for forming a metal-ceramic substrate as a carrier for electrical components, comprising: a base material and an active metal, wherein the solder material (30) is a foil comprising the base material in a first layer (31) and the active metal in a second layer (32), and wherein the foil has a total thickness (GD) which is less than 50 μm, preferably less than 25 μm and particularly preferably less than 15 μm.

Methods of forming joinery between components formed from dissimilar materials, and assemblies utilizing the joinery. The components include interface surfaces having complementary peaks and valleys that interlock. A compliant interface is formed between the interface surfaces and the interface can be configured to provide functionality.

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 μm or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).

Provided is a method that allows for firm joining of power module components even if a joining area is large. The method includes: forming an oxygen ion conductor layer on a surface of one of a first member to be joined containing metal and a second member to be joined containing ceramic; arranging the first member to be joined and the second member to be joined so that they are in contact with each other via the oxygen ion conductor layer; connecting the first member to be joined to one of a positive electrode side and a negative electrode side of a voltage application device and the second member to be joined to the other; and applying a voltage between the first member to be joined and the second member to be joined to join the first member to be joined and the second member to be joined together.

Provided are a brazing material in paste form containing a powder mixture that contains titanium powder having an average particle diameter (D50) of 20 μm or less in an amount of 0.7 to 2.0 mass %, copper powder in an amount of 3 to 15 mass %, and silver powder as the remaining portion, and a vehicle, and techniques associated with the brazing material.